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SDM20U30LPQ-7

Diodes Incorporated

SDM20U30LPQ-7 by Diodes Incorporated

SDM20U30LPQ-7 by Diodes Inc. is a Schottky rectifier diode with 30V max reverse voltage, 0.2A max output current, and 0.003us reverse recovery time. Ideal for automotive applications due to AEC-Q101 standard compliance and nickel palladium gold terminal finish.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,469 parts In-Stock

1+ parts

$0.300

100+ parts

$0.128

1k+ parts

$0.104

10k+ parts

$0.063

7,469

$0.300

$0.128

$0.104

$0.063

Mouser Electronics

USA . 2,963 parts In-Stock

1+ parts

$0.300

100+ parts

$0.111

1k+ parts

$0.096

10k+ parts

$0.062

2,963

$0.300

$0.111

$0.096

$0.062

Verical

USA . 1,434,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.063

1,434,000

-

-

-

$0.063

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

3,000

-

-

-

$0.092

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 19,693 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

19,693

-

-

-

$0.050

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Unlock the power of innovation with Diodes Incorporated's SDM20U30LPQ-7, a cutting-edge Schottky rectifier diode that offers unparalleled quality and performance. Designed for applications requiring high efficiency and fast switching speeds, this chip carrier diode boasts a maximum reverse recovery time of just 0.003 us. With a robust construction and top-of-the-line nickel palladium gold terminal finish, this diode is built to last in even the most demanding environments. Trust Diodes Incorporated to deliver superior products that exceed expectations and bring value to your projects. Elevate your designs with the SDM20U30LPQ-7 and experience the difference that quality craftsmanship can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments and applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Recovery Time: 0.003 us

Ensures fast switching and efficiency, ideal for high-frequency applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it reliable in different operating conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance, ensuring long-term performance.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification tasks, making it a reliable choice for power conversion applications.

Maximum Output Current: 0.2 A

Sufficient output current for various low-power applications.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching, increasing efficiency and reducing power losses.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for applications requiring voltage protection within this range.

Diode Element Material: SILICON

Silicon diodes offer good performance and reliability for a wide range of applications.

Technical Specifications

Diodes & Rectifiers SDM20U30LPQ-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.003 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

SDM20U30LPQ-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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