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SBR5E45P5-7

Diodes Incorporated

SBR5E45P5-7 by Diodes Incorporated

SBR5E45P5-7 by Diodes Inc. is a single rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 45V. It operates b/w -55 to 150°C, making it suitable for various applications requiring high efficiency and low forward voltage drop in compact electronic devices.

Median Price

$0.350

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,134 parts In-Stock

1+ parts

$0.550

100+ parts

$0.474

1k+ parts

$0.306

10k+ parts

$0.172

1,134

$0.550

$0.474

$0.306

$0.172

Verical

USA . 19,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

19,500

-

-

-

$0.150

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RC Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.290

1k+ parts

$0.280

10k+ parts

$0.270

4,000

-

$0.290

$0.280

$0.270

Overview

Enhance your electronic devices with the SBR5E45P5-7 by Diodes Incorporated, a top-quality manufacturer in the Diodes & Rectifiers category. This single-configured diode offers superior performance and reliability, making it ideal for a wide range of applications. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 45V, this diode provides unmatched value and benefits to customers seeking high-quality components for their projects. Upgrade your electronics with the SBR5E45P5-7 and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplifies circuit design and installation, making it easier to use in various applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 280 uA

Ensures efficient operation by minimizing power losses in reverse bias.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on a circuit board.

No. of Terminals: 3

Simplifies the connection process and provides flexibility in circuit design.

Maximum Operating Temperature: 150 °C

Suitable for use in a wide range of temperature environments, ensuring stability and reliability.

Minimum Operating Temperature: -55 °C

Provides versatility in usage, allowing the diode to function in extreme conditions.

Terminal Finish: MATTE TIN

Ensures good contact with other components and prevents corrosion, enhancing overall performance.

Terminal Position: DUAL

Allows for flexibility in installation and connection options, enhancing usability.

Case Connection: CATHODE

Clear indication of polarity simplifies circuit design and assembly.

Peak Reflow Temperature: 260C

Capable of withstanding high temperatures during soldering processes, ensuring reliability in manufacturing.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.6V

Low forward voltage drop minimizes power losses and improves efficiency.

Maximum Output Current: 5A

Ability to handle high currents without compromising performance, suitable for various power applications.

Maximum Repetitive Peak Reverse Voltage: 45V

Suited for applications requiring high reverse voltage protection, ensuring robust performance.

Diode Element Material: SILICON

Provides reliable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers SBR5E45P5-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

280 uA

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBR5E45P5-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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