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S1MSWF-7

Diodes Incorporated

S1MSWF-7 by Diodes Incorporated

S1MSWF-7 by Diodes Inc. is a single rectifier diode with 1A output current and 1000V peak reverse voltage. It has a fast reverse recovery time of 1us, making it suitable for applications requiring high efficiency and quick response times in automotive electronics. With a wide operating temperature range from -55°C to 150°C, this small outline package diode is ideal for use in harsh environments where reliability is crucial.

Median Price

$0.279

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 62 parts In-Stock

1+ parts

$0.279

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62

$0.279

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Vyrian

USA . 2,539 parts In-Stock

1+ parts

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2,539

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Chip Stock

USA . 212 parts In-Stock

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212

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 381 parts In-Stock

1+ parts

$0.010

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381

$0.010

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Aztec Data Supply Inc.

USA . 3,428 parts In-Stock

1+ parts

$0.160

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3,428

$0.160

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Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.163

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280

$0.163

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Advanced Electronics

New Zealand . 51 parts In-Stock

1+ parts

$0.195

100+ parts

$0.177

1k+ parts

$0.160

10k+ parts

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51

$0.195

$0.177

$0.160

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Continental Prestige Electronics

USA . 4,937 parts In-Stock

1+ parts

$0.279

100+ parts

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$0.273

4,937

$0.279

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$0.273

Argo Parts USA

USA . 1,060 parts In-Stock

1+ parts

$0.279

100+ parts

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10k+ parts

$0.271

1,060

$0.279

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$0.271

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.279

100+ parts

$0.273

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100

$0.279

$0.273

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AZTECH Wire

Italy . 726 parts In-Stock

1+ parts

$17.370

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726

$17.370

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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70,000

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Kepictronics

USA . 38,000 parts In-Stock

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38,000

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Lixinc

USA . 18,722 parts In-Stock

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18,722

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QUARKTWIN TECHNOLOGY LTD

USA . 9,327 parts In-Stock

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9,327

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Computer Components Inc. - USA

USA . 5,498 parts In-Stock

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5,498

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Overview

Experience the superior quality and reliability of the S1MSWF-7 by Diodes Incorporated, a leading manufacturer in the industry. This single rectifier diode offers exceptional performance in a compact, surface-mount package, making it ideal for a wide range of applications. With a maximum output current of 1A and a peak repetitive peak reverse voltage of 1000V, this diode ensures efficient power management and protection in your electronic devices. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations. Upgrade to the S1MSWF-7 today and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and mechanical protection, making the diode more durable and reliable.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and reducing manufacturing costs.

Maximum Reverse Recovery Time: 1 us

Fast reverse recovery time ensures efficient and quick switching operation.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for various applications.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering, ensuring reliable solder joints.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, providing efficient current flow in one direction.

Maximum Output Current: 1 A

Capable of handling high output currents, suitable for many power supply and rectification applications.

Maximum Repetitive Peak Reverse Voltage: 1000 V

High reverse voltage rating allows for use in high voltage applications without risk of breakdown.

Technical Specifications

Diodes & Rectifiers S1MSWF-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

1 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

S1MSWF-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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