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PSMAJ440A-13

Diodes Incorporated

PSMAJ440A-13 by Diodes Incorporated

PSMAJ440A-13 by Diodes Inc. is a single avalanche diode with 400W peak power dissipation, 440V breakdown voltage, and 5uA reverse current. It is used for transient suppression in applications requiring protection against voltage spikes. The device comes in a small outline package with matte tin finish and operates b/w -55°C to 150°C.

Median Price

$0.620

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,284 parts In-Stock

1+ parts

$0.620

100+ parts

$0.297

1k+ parts

$0.201

10k+ parts

$0.180

2,284

$0.620

$0.297

$0.201

$0.180

DigiKey

USA . 5,000 parts In-Stock

1+ parts

$0.910

100+ parts

$0.365

1k+ parts

$0.252

10k+ parts

$0.229

5,000

$0.910

$0.365

$0.252

$0.229

Future Electronics

Canada . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.142

10,000

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-

$0.142

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.343

100+ parts

-

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300

$0.343

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NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

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$0.262

10,000

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$0.262

IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

-

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$0.213

10,000

-

-

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$0.213

Chip Stock

USA . 5,838 parts In-Stock

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5,838

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Vyrian

USA . 4,375 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 220 parts In-Stock

1+ parts

$0.073

100+ parts

-

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220

$0.073

-

-

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Ampacity Inc.

Singapore . 4,085 parts In-Stock

1+ parts

$0.117

100+ parts

-

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4,085

$0.117

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Corohmni

South Africa . 767 parts In-Stock

1+ parts

$0.156

100+ parts

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767

$0.156

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Continental Prestige Electronics

USA . 6,007 parts In-Stock

1+ parts

$0.343

100+ parts

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1k+ parts

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10k+ parts

$0.336

6,007

$0.343

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$0.336

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.343

100+ parts

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1,000

$0.343

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Argo Parts USA

USA . 333 parts In-Stock

1+ parts

$0.343

100+ parts

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10k+ parts

$0.332

333

$0.343

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$0.332

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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7,000

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Eastek

USA . 5,000 parts In-Stock

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5,000

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GreenTree Electronics

Israel . 5,000 parts In-Stock

1+ parts

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5,000

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iodParts Technologies Inc.

India . 4,915 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.534

10k+ parts

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4,915

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$0.534

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Overview

Enhance your electronic designs with the PSMAJ440A-13 from Diodes Incorporated, a leading manufacturer known for superior quality and reliability. As a Transient Suppression Device, this product offers valuable protection against voltage spikes, ensuring the longevity of your circuitry. With a maximum clamping voltage of 602V and a compact single package design, the PSMAJ440A-13 is versatile and ideal for a wide range of applications. Trust Diodes Incorporated to provide you with top-notch components that deliver exceptional performance and peace of mind. Upgrade your projects today with the PSMAJ440A-13.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the device, making it suitable for various environments.

Nominal Breakdown Voltage: 440 V

High breakdown voltage ensures efficient protection against transient voltage spikes, enhancing the reliability of the device.

Maximum Power Dissipation: 1 W

Low power dissipation helps in minimizing energy losses and heat generation, contributing to the overall efficiency of the device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of high-quality trans voltage suppressor diode ensures effective transient suppression and reliable performance of the device.

Maximum Clamping Voltage: 602 V

High clamping voltage protects connected components by limiting the voltage spike to a safe level, preventing damage to sensitive electronics.

Technical Specifications

Transient Suppression Devices PSMAJ440A-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

462 V

Minimum Breakdown Voltage:

418 V

Nominal Breakdown Voltage:

440 V

Maximum Clamping Voltage:

602 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

6.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Maximum Repetitive Peak Reverse Voltage:

376 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

376 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PSMAJ440A-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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