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PI3USB221EZWEX-13R

Diodes Incorporated

PI3USB221EZWEX-13R by Diodes Incorporated

DIFFERENTIAL MULTIPLEXER; No. of Terminals: 10; Package Code: HVSON; Package Shape: SQUARE; Surface Mount: YES; Nominal On-state Resistance Match: .2 ohm;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,902

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-

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Sensible Micro Corp

USA . 184 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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184

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 7,461 parts In-Stock

1+ parts

$4.720

100+ parts

-

1k+ parts

-

10k+ parts

-

7,461

$4.720

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-

-

AZTECH Wire

Italy . 748 parts In-Stock

1+ parts

$13.240

100+ parts

-

1k+ parts

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10k+ parts

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748

$13.240

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QUARKTWIN TECHNOLOGY LTD

USA . 18,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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18,520

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Technical Specifications

Multiplexers & Switches PI3USB221EZWEX-13R attributes and parameters. Explore more Multiplexers & Switches devices from Diodes Incorporated

Specs

Other IC type:

JESD-30 Code:

S-PDSO-N10

Length:

3 mm

Normal Position (V):

NO

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

10

Nominal Off-state Isolation:

41 dB

Nominal On-state Resistance Match:

.2 ohm

Maximum On-state Resistance (Ron):

6 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC10,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

.65 mm

Maximum Signal Current:

.1 A

Maximum Supply Current (Isup):

.05 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Maximum Switch-off Time:

12 ns

Maximum Switch-on Time:

125 ns

Switching (V):

BREAK-BEFORE-MAKE

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width (mm):

3 mm

Trade Compliance

PI3USB221EZWEX-13R Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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