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PDR5K-13

Diodes Incorporated

PDR5K-13 by Diodes Incorporated

PDR5K-13 by Diodes Inc. is a single rectifier diode with a max output current of 5A and peak repetitive reverse voltage of 750V. It operates b/w -65°C to 175°C, making it suitable for various applications in electronics requiring high power efficiency and fast recovery times. The diode's small outline package style and matte tin terminal finish enhance its performance in surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,027 parts In-Stock

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3,027

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Prism Electronics

USA . 40 parts In-Stock

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40

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,195 parts In-Stock

1+ parts

$0.040

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$0.040

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Corohmni

South Africa . 663 parts In-Stock

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$0.050

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663

$0.050

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Ampacity Inc.

Singapore . 1,524 parts In-Stock

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$2.010

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1,524

$2.010

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Semicontronic

India . 1,512 parts In-Stock

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$2.010

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$1.960

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$1.950

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1,512

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 215 parts In-Stock

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$8.164

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215

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Kepictronics

USA . 39,861 parts In-Stock

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Lixinc

USA . 12,031 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Continental Prestige Electronics

USA . 5,389 parts In-Stock

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5,389

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Argo Parts USA

USA . 3,223 parts In-Stock

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3,223

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Unlock the power of reliable and efficient electrical systems with the PDR5K-13 by Diodes Incorporated. Crafted with precision and expertise, this high-quality rectifier diode offers unparalleled performance and durability for a wide range of applications. From automotive to industrial electronics, the PDR5K-13 delivers exceptional value with its fast reverse recovery time and high output current capacity. Trust in Diodes Incorporated to bring you cutting-edge technology that enhances your projects and keeps them running smoothly. Choose the PDR5K-13 for superior quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the diode, making it a reliable choice for long-term use.

Config: SINGLE

Single configuration simplifies the overall design and integration process, making it easy to use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient mounting on circuit boards, saving space and enabling efficient assembly.

Maximum Reverse Recovery Time: 3 us

Fast reverse recovery time ensures efficient diode performance, reducing power loss and improving overall efficiency.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for reliable performance in a variety of environments and applications.

Terminal Finish: MATTE TIN

MATTE TIN finish provides a reliable terminal connection, ensuring good conductivity and longevity for the diode.

Maximum Output Current: 5 A

High maximum output current capability allows for reliable and efficient power handling, suitable for a wide range of applications.

Maximum Repetitive Peak Reverse Voltage: 750 V

High maximum reverse voltage rating provides protection against voltage spikes and surges, enhancing the overall reliability of the diode.

Technical Specifications

Diodes & Rectifiers PDR5K-13 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.87 V

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

750 V

Maximum Reverse Recovery Time:

3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

PDR5K-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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