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P6SMAJ54ADF-13

Diodes Incorporated

P6SMAJ54ADF-13 by Diodes Incorporated

P6SMAJ54ADF-13 by Diodes Inc. is a unidirectional Trans Voltage Suppressor diode with 54V repetitive peak reverse voltage and 600W non-repetitive peak power dissipation. It operates b/w -55 to 150°C, making it suitable for transient suppression in various electronic applications. The device comes in a small outline package with matte tin finish, ideal for surface mount assembly.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 10,000 parts In-Stock

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$0.125

10,000

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$0.125

Distributors (In-Stock)

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Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.177

100+ parts

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650

$0.177

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Bristol Electronics

USA . 9,660 parts In-Stock

1+ parts

$0.670

100+ parts

$0.335

1k+ parts

$0.134

10k+ parts

$0.084

9,660

$0.670

$0.335

$0.134

$0.084

ACDS - Activité Composants Distribution Service

France . 9,660 parts In-Stock

1+ parts

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9,660

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Dan-Mar Components

USA . 9,660 parts In-Stock

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9,660

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Vyrian

USA . 8,244 parts In-Stock

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8,244

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.055

100+ parts

$0.050

1k+ parts

$0.045

10k+ parts

-

60

$0.055

$0.050

$0.045

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Ampacity Inc.

Singapore . 9,601 parts In-Stock

1+ parts

$0.095

100+ parts

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9,601

$0.095

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Component Stockers USA

USA . 69,696 parts In-Stock

1+ parts

$1.040

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69,696

$1.040

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AZTECH Wire

Italy . 846 parts In-Stock

1+ parts

$13.360

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846

$13.360

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Elevate your electronics with the P6SMAJ54ADF-13 by Diodes Incorporated, a leading manufacturer known for top-quality transient suppression devices. This single-configured diode boasts a maximum non-repetitive peak reverse power dissipation of 600W and a wide operating temperature range from -55°C to 150°C. Perfect for applications requiring reliable protection against voltage transients, this diode offers unmatched value, benefits, and advantages to customers seeking peace of mind and superior performance in their electronic systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the device, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability ensures protection against sudden voltage spikes and surges.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

Can withstand low temperatures, making it suitable for use in cold climates or industrial settings.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, providing reliable protection for sensitive electronic components.

Technical Specifications

Transient Suppression Devices P6SMAJ54ADF-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

69 V

Minimum Breakdown Voltage:

60 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Maximum Repetitive Peak Reverse Voltage:

54 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMAJ54ADF-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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