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P6SMAJ40ADF-13

Diodes Incorporated

P6SMAJ40ADF-13 by Diodes Incorporated

P6SMAJ40ADF-13 by Diodes Inc. is a unidirectional Trans Voltage Suppressor Diode with 40V peak reverse voltage and 600W peak power dissipation. It is designed for transient suppression applications in electronic circuits, offering avalanche technology and operating temperature range of -55 to 150°C.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.125

10,000

-

-

-

$0.125

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.191

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-

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Vyrian

USA . 3,066 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,066

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 304 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

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10k+ parts

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304

$0.010

-

-

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Ampacity Inc.

Singapore . 9,975 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

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10k+ parts

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9,975

$0.095

-

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Semicontronic

India . 9,839 parts In-Stock

1+ parts

$0.095

100+ parts

$0.093

1k+ parts

$0.092

10k+ parts

-

9,839

$0.095

$0.093

$0.092

-

Continental Prestige Electronics

USA . 6,130 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

-

10k+ parts

$0.187

6,130

$0.191

-

-

$0.187

Argo Parts USA

USA . 4,207 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

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$0.185

4,207

$0.191

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-

$0.185

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.191

100+ parts

$0.187

1k+ parts

-

10k+ parts

-

100

$0.191

$0.187

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-

Corohmni

South Africa . 697 parts In-Stock

1+ parts

$0.199

100+ parts

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697

$0.199

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AZTECH Wire

Italy . 571 parts In-Stock

1+ parts

$16.310

100+ parts

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571

$16.310

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Lixinc

USA . 1,145 parts In-Stock

1+ parts

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100+ parts

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1,145

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Overview

Experience superior transient suppression with the P6SMAJ40ADF-13 by Diodes Incorporated. Known for their high-quality products, Diodes Incorporated brings you a single-configured, surface mount device designed to protect your electronics from voltage spikes. Ideal for a wide range of applications, this diode offers peace of mind with its maximum power dissipation of 600W and minimum breakdown voltage of 44.4V. Trust in Diodes Incorporated for reliable protection and invest in the P6SMAJ40ADF-13 for optimal performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection and durability for the device, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability allows the device to effectively handle transient voltage spikes and protect connected components.

Maximum Operating Temperature: 150 °C

The device can operate at high temperatures without losing its functionality, making it suitable for a wide range of environments.

Minimum Breakdown Voltage: 44.4 V

The low breakdown voltage ensures that the device triggers quickly to suppress voltage spikes and protect sensitive electronics.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient voltage suppression, making it highly effective in safeguarding equipment.

Technical Specifications

Transient Suppression Devices P6SMAJ40ADF-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

51.1 V

Minimum Breakdown Voltage:

44.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Maximum Repetitive Peak Reverse Voltage:

40 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMAJ40ADF-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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