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P6SMAJ11ADF-13

Diodes Incorporated

P6SMAJ11ADF-13 by Diodes Incorporated

P6SMAJ11ADF-13 by Diodes Inc. is a unidirectional Trans Voltage Suppressor diode with 11V repetitive peak reverse voltage and 600W non-repetitive peak power dissipation. It is designed for transient suppression applications in electronic circuits, offering a breakdown voltage of 12.2V to protect against voltage spikes and surges.

Median Price

$0.589

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 9,511 parts In-Stock

1+ parts

$0.589

100+ parts

$0.294

1k+ parts

$0.118

10k+ parts

$0.074

9,511

$0.589

$0.294

$0.118

$0.074

ACDS - Activité Composants Distribution Service

France . 9,511 parts In-Stock

1+ parts

-

100+ parts

-

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-

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-

9,511

-

-

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Dan-Mar Components

USA . 9,511 parts In-Stock

1+ parts

-

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1k+ parts

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9,511

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-

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Vyrian

USA . 5,544 parts In-Stock

1+ parts

-

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5,544

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,449 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

1k+ parts

$0.010

10k+ parts

-

1,449

$0.010

$0.010

$0.010

-

Ampacity Inc.

Singapore . 322 parts In-Stock

1+ parts

$0.010

100+ parts

-

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322

$0.010

-

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Corohmni

South Africa . 68 parts In-Stock

1+ parts

$0.119

100+ parts

-

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68

$0.119

-

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Aztec Data Supply Inc.

USA . 182 parts In-Stock

1+ parts

$0.190

100+ parts

-

1k+ parts

-

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182

$0.190

-

-

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.195

100+ parts

$0.193

1k+ parts

$0.185

10k+ parts

-

500

$0.195

$0.193

$0.185

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AZTECH Wire

Italy . 787 parts In-Stock

1+ parts

$19.759

100+ parts

-

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787

$19.759

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Continental Prestige Electronics

USA . 5,812 parts In-Stock

1+ parts

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5,812

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Argo Parts USA

USA . 334 parts In-Stock

1+ parts

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334

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Bastille Electronics

Australia . 23 parts In-Stock

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23

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Overview

Discover the unmatched quality and reliability of the P6SMAJ11ADF-13 by Diodes Incorporated, a leading manufacturer in the industry. As a Transient Suppression Device, this product offers superior protection against voltage spikes and surges, making it an essential component for various applications. With its high power dissipation capability and durable construction, customers can trust in the value and benefits this device provides. Ensure your electronic systems are safeguarded with the P6SMAJ11ADF-13 for peace of mind and optimal performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Offers high power dissipation capability for effective transient suppression, ensuring the protection of sensitive electronic components.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it reliable in harsh operating environments.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature conditions without compromising performance.

Terminal Finish: MATTE TIN

Provides good solderability for reliable connections during assembly.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Designed specifically for transient suppression applications, offering effective protection against voltage spikes.

Maximum Repetitive Peak Reverse Voltage: 11 V

Suitable for applications where the maximum voltage does not exceed this value, providing precise protection.

Technical Specifications

Transient Suppression Devices P6SMAJ11ADF-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

14.4 V

Minimum Breakdown Voltage:

12.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Maximum Repetitive Peak Reverse Voltage:

11 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMAJ11ADF-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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