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MMBD5004S-7

Diodes Incorporated

MMBD5004S-7 by Diodes Incorporated

MMBD5004S-7 by Diodes Inc. is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.05 us and can handle up to 400V repetitive peak reverse voltage. Ideal for rectification applications requiring low forward voltage drop and high current capability.

Median Price

$0.169

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

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$0.169

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100

$0.169

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Chip Stock

USA . 210,250 parts In-Stock

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210,250

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Vyrian

USA . 18,690 parts In-Stock

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18,690

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ComSIT Distribution GmbH

Germany . 2,378 parts In-Stock

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2,378

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Martec Srl

Italy . 171 parts In-Stock

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171

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 226 parts In-Stock

1+ parts

$0.010

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226

$0.010

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Corohmni

South Africa . 341 parts In-Stock

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$0.149

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341

$0.149

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Continental Prestige Electronics

USA . 4,095 parts In-Stock

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$0.169

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$0.166

4,095

$0.169

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$0.166

Argo Parts USA

USA . 2,503 parts In-Stock

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$0.169

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$0.164

2,503

$0.169

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$0.164

Netroflash

USA . 2,000 parts In-Stock

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$0.169

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2,000

$0.169

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Semicontronic

India . 198 parts In-Stock

1+ parts

$1.010

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$0.985

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$0.980

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198

$1.010

$0.985

$0.980

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Andel Nordic

Denmark . 1,427 parts In-Stock

1+ parts

$7.844

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$7.530

10k+ parts

$7.530

1,427

$7.844

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$7.530

$7.530

AZTECH Wire

Italy . 189 parts In-Stock

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$19.205

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189

$19.205

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 66,000 parts In-Stock

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Lixinc

USA . 14,785 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,619 parts In-Stock

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4,619

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Futuretech Components

Singapore . 967 parts In-Stock

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967

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iodParts Technologies Inc.

India . 200 parts In-Stock

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200

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Overview

Looking for high-quality diodes & rectifiers? Look no further than the MMBD5004S-7 by Diodes Incorporated. With a reputation for excellence in manufacturing, this series connected, center tap diode offers reliability and performance. Ideal for a variety of applications, this product is designed to withstand extreme temperatures and deliver efficient power dissipation. Experience the value and benefits of the MMBD5004S-7, providing customers with a reliable solution for their electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a long lifespan.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Optimal configuration for efficient power management and voltage regulation.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time ensures quick and efficient switching.

Surface Mount: YES

Easy to install and saves valuable PCB space.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various application environments.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop leads to energy efficiency.

Maximum Output Current: 0.3 A

Able to handle moderate current loads effectively.

Technical Specifications

Diodes & Rectifiers MMBD5004S-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

3 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD5004S-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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