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MMBD3004BRM-7

Diodes Incorporated

MMBD3004BRM-7 by Diodes Incorporated

MMBD3004BRM-7 by Diodes Inc. is a rectifier diode with 2 elements in 2 banks, series connected, featuring a max reverse recovery time of 0.05 us and max output current of 0.225 A. It is used in applications requiring a small outline package style, with a peak reflow temperature of 260°C and max repetitive peak reverse voltage of 350 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 15,676 parts In-Stock

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Bristol Electronics

USA . 2,235 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ampacity Inc.

Singapore . 387 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 1,439 parts In-Stock

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$0.040

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Corohmni

South Africa . 492 parts In-Stock

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$0.135

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Benley Electronics

USA . 1 parts In-Stock

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$0.750

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AZTECH Wire

Italy . 743 parts In-Stock

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Continental Prestige Electronics

USA . 3,398 parts In-Stock

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Perfect Parts

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Argo Parts USA

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Lixinc

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Aranea Global

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Overview

Unleash the power of innovation with the MMBD3004BRM-7 by Diodes Incorporated. This high-quality rectifier diode offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. With its advanced design and superior materials, this diode ensures maximum efficiency and durability. Say goodbye to compromises and experience the value and benefits of the MMBD3004BRM-7 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the diodes, ensuring longevity.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time allows for efficient switching and reduces energy loss.

Reverse Test Voltage: 240 V

Suitable for applications requiring high reverse voltage protection.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it versatile for various operating conditions.

Maximum Repetitive Peak Reverse Voltage: 350 V

Provides high reverse voltage protection, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MMBD3004BRM-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.87 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.225 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

350 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

240 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD3004BRM-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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