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MBR10150CT-LJ

Diodes Incorporated

MBR10150CT-LJ by Diodes Incorporated

MBR10150CT-LJ by Diodes Inc. is a Schottky rectifier diode with 150V peak reverse voltage and 5A output current. It features common cathode configuration, matte tin finish, and operates b/w -55°C to 175°C. Ideal for automotive applications due to AEC-Q101 standard compliance.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$0.091

100+ parts

$0.083

1k+ parts

$0.075

10k+ parts

-

1,000

$0.091

$0.083

$0.075

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.310

100+ parts

-

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150

$0.310

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Bristol Electronics

USA . 49 parts In-Stock

1+ parts

$0.938

100+ parts

$0.375

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49

$0.938

$0.375

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Vyrian

USA . 8,146 parts In-Stock

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8,146

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ACDS - Activité Composants Distribution Service

France . 49 parts In-Stock

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49

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Dan-Mar Components

USA . 49 parts In-Stock

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49

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,089 parts In-Stock

1+ parts

$0.043

100+ parts

-

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3,089

$0.043

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Ampacity Inc.

Singapore . 697 parts In-Stock

1+ parts

$0.077

100+ parts

-

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697

$0.077

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.091

100+ parts

$0.083

1k+ parts

$0.075

10k+ parts

-

1,000

$0.091

$0.083

$0.075

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Corohmni

South Africa . 946 parts In-Stock

1+ parts

$0.110

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946

$0.110

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.310

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2,000

$0.310

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Argo Parts USA

USA . 1,853 parts In-Stock

1+ parts

$0.310

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$0.301

1,853

$0.310

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$0.301

Continental Prestige Electronics

USA . 1,143 parts In-Stock

1+ parts

$0.310

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$0.304

1,143

$0.310

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$0.304

AZTECH Wire

Italy . 714 parts In-Stock

1+ parts

$12.570

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714

$12.570

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Lixinc

USA . 13,323 parts In-Stock

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13,323

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,472 parts In-Stock

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Perfect Parts

USA . 1,624 parts In-Stock

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1,624

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Overview

Discover the cutting-edge MBR10150CT-LJ by Diodes Incorporated, a leading manufacturer in the industry. This Schottky rectifier diode offers unbeatable quality and reliability, making it perfect for a wide range of applications. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 150V, this diode is a top choice for any project requiring precision and efficiency. Trust Diodes Incorporated to deliver exceptional performance with the MBR10150CT-LJ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diodes, ensuring long-term reliability.

Maximum Reverse Current: 50 uA

Low reverse current minimizes power loss and improves efficiency of the diodes.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments without performance degradation.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting alternating current (AC) to direct current (DC), making this product versatile for various applications.

Maximum Forward Voltage (VF): 0.89 V

Low forward voltage drop minimizes power dissipation and improves energy efficiency in electronic circuits.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them ideal for high-frequency and high-efficiency applications.

Technical Specifications

Diodes & Rectifiers MBR10150CT-LJ attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

50 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR10150CT-LJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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