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MB3510W

Diodes Incorporated

MB3510W by Diodes Incorporated

The Diodes Inc. MB3510W is a bridge rectifier diode with 4 elements, capable of handling up to 35A output current and 1000V repetitive peak reverse voltage. Its metal package body and matte tin terminal finish make it suitable for high-temperature applications like power supplies and industrial equipment.

Median Price

$1.463

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 133 parts In-Stock

1+ parts

-

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$1.463

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133

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$1.463

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Distributors (In-Stock)

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TME

Poland . 133 parts In-Stock

1+ parts

$1.580

100+ parts

$1.130

1k+ parts

$1.050

10k+ parts

-

133

$1.580

$1.130

$1.050

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Vyrian

USA . 432 parts In-Stock

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432

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Nova Conductors

Japan . 361 parts In-Stock

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361

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 563 parts In-Stock

1+ parts

$19.015

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563

$19.015

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Metaverse IC Inc.

Canada . 66,818 parts In-Stock

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66,818

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Continental Prestige Electronics

USA . 4,383 parts In-Stock

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4,383

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Argo Parts USA

USA . 1,151 parts In-Stock

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1,151

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Bastille Electronics

Australia . 103 parts In-Stock

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103

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Overview

Looking for a reliable and high-quality bridge rectifier diode? Look no further than the MB3510W by Diodes Incorporated. With a reputation for excellence in semiconductor technology, Diodes Incorporated delivers top-notch products that exceed industry standards. The MB3510W is perfect for a wide range of applications, offering customers exceptional value and performance. Trust Diodes Incorporated to provide you with the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and heat dissipation, making the diode more reliable in high temperature environments.

Maximum Reverse Current: 0.00001 uA

Low reverse current ensures minimal power loss and improves efficiency of the circuit.

Minimum Breakdown Voltage: 1000 V

High breakdown voltage ensures reliable operation in high voltage applications, reducing the risk of damage or failure.

Maximum Output Current: 35 A

High maximum output current rating allows for the diode to handle higher power loads, making it suitable for a wide range of applications.

Diode Element Material: SILICON

Silicon diodes are known for their reliable performance and stable characteristics, making them a preferred choice for many applications.

Technical Specifications

Bridge Rectifier Diodes MB3510W attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

S-MUFM-W4

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

35 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

.00001 uA

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MB3510W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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