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KBP410G

Diodes Incorporated

KBP410G by Diodes Incorporated

The Diodes Inc. KBP410G is a bridge rectifier diode with 4 elements, capable of handling up to 2A output current and 1000V breakdown voltage. Its plastic/epoxy package makes it suitable for applications requiring rectification in temperatures ranging from -55°C to 150°C. Ideal for power supply units, lighting systems, and industrial equipment due to its high reliability and performance.

Median Price

$0.850

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 476 parts In-Stock

1+ parts

$0.850

100+ parts

$0.412

1k+ parts

$0.257

10k+ parts

$0.188

476

$0.850

$0.412

$0.257

$0.188

Mouser Electronics

USA . 578 parts In-Stock

1+ parts

$1.150

100+ parts

$0.773

1k+ parts

$0.453

10k+ parts

$0.314

578

$1.150

$0.773

$0.453

$0.314

Verical

USA . 420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.298

10k+ parts

-

420

-

-

$0.298

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 9,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 4,726 parts In-Stock

1+ parts

$3.380

100+ parts

-

1k+ parts

-

10k+ parts

-

4,726

$3.380

-

-

-

Kepictronics

USA . 1,352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,352

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Perfect Parts

USA . 78 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

78

-

-

-

-

Overview

Discover the superior quality and reliability of the KBP410G Bridge Rectifier Diode by Diodes Incorporated. Designed with precision and expertise, this product offers unmatched performance and durability for a wide range of applications. From power supplies to industrial equipment, the KBP410G delivers consistent and efficient power conversion, ensuring optimal functionality and long-lasting performance. Trust in Diodes Incorporated to provide innovative solutions that exceed your expectations and elevate your projects to new heights. Choose the KBP410G for unparalleled value, benefits, and advantages that will enhance your application experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides good insulation and thermal properties, ensuring the safety and reliability of the bridge rectifier diode.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this bridge rectifier diode can withstand a wide range of temperature variations, making it suitable for various applications.

Minimum Breakdown Voltage: 1000 V

The high minimum breakdown voltage of 1000V ensures that the bridge rectifier diode can handle high voltage levels without failing, making it a reliable component in electronic circuits.

Maximum Output Current: 2 A

With a maximum output current of 2A, this bridge rectifier diode is suitable for low to medium power applications, providing efficient rectification of AC to DC.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high maximum repetitive peak reverse voltage of 1000V enables the bridge rectifier diode to withstand reverse voltage stress, ensuring long-term performance and durability.

Technical Specifications

Bridge Rectifier Diodes KBP410G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

1000 V

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

KBP410G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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