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KBP308G

Diodes Incorporated

KBP308G by Diodes Incorporated

The Diodes Inc. KBP308G is a bridge rectifier diode with 4 elements, capable of handling up to 1.9A output current and 800V breakdown voltage. Its plastic/epoxy package makes it suitable for applications requiring isolated case connection in temperatures ranging from -55°C to 150°C.

Median Price

$0.550

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 500 parts In-Stock

1+ parts

$0.550

100+ parts

$0.214

1k+ parts

$0.144

10k+ parts

$0.104

500

$0.550

$0.214

$0.144

$0.104

Mouser Electronics

USA . 497 parts In-Stock

1+ parts

$0.550

100+ parts

$0.215

1k+ parts

$0.123

10k+ parts

$0.098

497

$0.550

$0.215

$0.123

$0.098

Verical

USA . 420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.306

10k+ parts

-

420

-

-

$0.306

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 300 parts In-Stock

1+ parts

$0.510

100+ parts

$0.176

1k+ parts

$0.111

10k+ parts

$0.094

300

$0.510

$0.176

$0.111

$0.094

Vyrian

USA . 373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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373

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,620 parts In-Stock

1+ parts

$0.437

100+ parts

-

1k+ parts

-

10k+ parts

$0.428

4,620

$0.437

-

-

$0.428

Argo Parts USA

USA . 4,513 parts In-Stock

1+ parts

$0.437

100+ parts

-

1k+ parts

-

10k+ parts

$0.424

4,513

$0.437

-

-

$0.424

Microchip USA

USA . 2,837 parts In-Stock

1+ parts

$5.330

100+ parts

-

1k+ parts

-

10k+ parts

-

2,837

$5.330

-

-

-

Metaverse IC Inc.

Canada . 115,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

115,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 25,925 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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25,925

-

-

-

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A-Z Elektronik GmbH

Germany . 5,747 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,747

-

-

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S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

-

Glotronic Ltd.

UK . 2,005 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,005

-

-

-

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Kepictronics

USA . 66 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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66

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-

-

-

Overview

Enhance your electronic projects with the KBP308G bridge rectifier diode by Diodes Incorporated. Known for their high-quality components, Diodes Incorporated delivers reliable products that exceed industry standards. Ideal for a wide range of applications, this bridge rectifier diode provides efficient rectification of alternating currents, ensuring smooth operation of your circuits. With a maximum output current of 1.9A and a maximum repetitive peak reverse voltage of 800V, the KBP308G offers exceptional performance and durability. Trust Diodes Incorporated to provide you with the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes inside, increasing their lifespan.

Config: BRIDGE, 4 ELEMENTS

Efficiently converts AC to DC, ensuring smooth power supply.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various industrial applications.

Minimum Breakdown Voltage: 800 V

Provides reliable protection against voltage surges and spikes.

Maximum Output Current: 1.9 A

Able to handle moderate current loads, making it versatile for different applications.

Technical Specifications

Bridge Rectifier Diodes KBP308G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

800 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.9 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

800 V

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

KBP308G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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