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H105H

Diodes Incorporated

H105H by Diodes Incorporated

H105H by Diodes Inc. is a SIDAC diode with 14A peak current, 50mA holding current, and 110V breakdown voltage. It is a single configuration in a plastic/epoxy package suitable for surface mount applications. Ideal for triggering devices in circuits operating b/w -40°C to 105°C.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 1,791,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.030

1,791,000

-

-

-

$0.030

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 847 parts In-Stock

1+ parts

$0.569

100+ parts

-

1k+ parts

-

10k+ parts

-

847

$0.569

-

-

-

Northwest PG Solutions

USA . 760 parts In-Stock

1+ parts

$0.626

100+ parts

-

1k+ parts

-

10k+ parts

-

760

$0.626

-

-

-

Overview

Discover the superior quality and reliability of the H105H by Diodes Incorporated, a leading manufacturer in the electronics industry. This Silicone Diode for Alternating Current (SIDAC) offers versatile applications and unmatched performance. With a non-repetitive peak on-state current of 14A and a nominal holding current of 50mA, this product is designed to exceed expectations. Its surface-mount capability and compact package make it ideal for a wide range of electronic devices. Experience the value and benefits of the H105H SIDAC, providing customers with innovative solutions for their electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Configuration: SINGLE

Simplifies the circuit design by having only one SIDAC in the package, making it easier to incorporate into a system.

Non Repetitive Peak On-state Current: 14 A

Allows the SIDAC to handle high currents, making it suitable for applications where high power handling capabilities are required.

Surface Mount: YES

Enables easy and secure mounting on a PCB, facilitating efficient assembly processes.

Nominal Holding Current: 50 mA

Ensures stable operation of the SIDAC by maintaining a minimum current level required to keep the device triggered.

Package Shape: RECTANGULAR

Facilitates easy placement and handling during manufacturing and assembly processes.

Terminal Form: GULL WING

Offers a secure connection to the PCB and allows for easy soldering, ensuring reliable electrical contact.

No. of Terminals: 2

Simplifies the connection of the SIDAC to the circuit, reducing complexity and potential points of failure.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB, making it ideal for applications where size constraints are a concern.

Maximum Operating Temperature: 105 °C

Allows the SIDAC to operate reliably in high-temperature environments without compromising performance.

Trigger Device Type: SIDAC

Specifically designed for triggering higher power semiconductor devices, suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

Ensures the SIDAC can operate in a wide temperature range, making it versatile and reliable in various environments.

Terminal Finish: MATTE TIN

Provides a corrosion-resistant finish on the terminals, ensuring long-term reliability and stable electrical connections.

Terminal Position: DUAL

Allows for versatile installation options and easy integrating into different circuit configurations.

Maximum Breakdown Voltage: 110 V

Offers protection against voltage spikes and ensures the SIDAC can withstand high voltage levels, enhancing the product's durability.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) H105H attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

110 V

Configuration:

Nominal Holding Current:

50 mA

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

14 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

H105H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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