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GC1200021

Diodes Incorporated

GC1200021 by Diodes Incorporated

Diodes Inc. GC1200021 is a 12MHz crystal oscillator with aging of 5PPM/yr. It features surface mounting and drive level of 100uW. Ideal for applications requiring precise timing in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,272 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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4,272

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Nova Conductors

Japan . 48 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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48

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 280 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

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10k+ parts

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280

$2.010

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AZTECH Wire

Italy . 453 parts In-Stock

1+ parts

$12.600

100+ parts

-

1k+ parts

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10k+ parts

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453

$12.600

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,000

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Overview

Experience superior performance and reliability with the GC1200021 Crystal Oscillator by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and precision in every product. Ideal for a wide range of applications, this crystal oscillator offers stable operation at 12 MHz with low aging rates of 5 PPM/first year. With surface mounting features and a compact design, the GC1200021 provides customers with unmatched value, efficiency, and accuracy for their electronic devices. Trust Diodes Incorporated for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal oscillator provides stable and reliable frequency output, making it suitable for precise timing applications.

Nominal Operating Frequency: 12 MHz

Operating at 12 MHz provides a good balance between speed and power consumption, making it versatile for various electronic applications.

Aging: 5 PPM/FIRST YEAR

With a low aging rate of 5 PPM per year, this crystal oscillator will maintain its frequency accuracy over a long period, ensuring consistent performance.

Mounting Feature: SURFACE MOUNT

Surface mountable design makes it easy to integrate into PCBs, saving space and simplifying assembly process.

Drive Level: 100 uW

Low drive level requirement of 100 uW helps in minimizing power consumption and heat generation, contributing to energy efficiency.

Physical Dimension: L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

Compact size allows for easy placement on circuit boards and compatibility with various electronic devices.

Technical Specifications

Crystal Oscillators GC1200021 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

100 uW

Mounting Feature:

Nominal Operating Frequency:

12 MHz

Physical Dimension:

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

Trade Compliance

GC1200021 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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