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GBJ5010

Diodes Incorporated

GBJ5010 by Diodes Incorporated

GBJ5010 by Diodes Inc. is a bridge rectifier diode with a max output current of 4.9A and a max reverse current of 10uA. It is commonly used in applications requiring high voltage rectification, such as power supplies and motor drives.

Median Price

$1.206

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.137

10k+ parts

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9,250

-

-

$2.137

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Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.606

10k+ parts

-

3,000

-

-

$0.606

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RS (Exports)

UK . 90 parts In-Stock

1+ parts

-

100+ parts

$1.206

1k+ parts

$0.959

10k+ parts

-

90

-

$1.206

$0.959

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 590 parts In-Stock

1+ parts

$0.652

100+ parts

-

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590

$0.652

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Vyrian

USA . 6,293 parts In-Stock

1+ parts

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100+ parts

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6,293

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NAC Semi

USA . 438 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.756

10k+ parts

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438

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$0.756

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Nova Conductors

Japan . 72 parts In-Stock

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72

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 3,546 parts In-Stock

1+ parts

$5.928

100+ parts

-

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10k+ parts

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3,546

$5.928

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

1+ parts

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30,000

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QUARKTWIN TECHNOLOGY LTD

USA . 25,952 parts In-Stock

1+ parts

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25,952

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CPlus Electronics

USA . 9,999 parts In-Stock

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9,999

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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GreenTree Electronics

Israel . 3,377 parts In-Stock

1+ parts

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3,377

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Bastille Electronics

Australia . 15 parts In-Stock

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15

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Overview

Discover the GBJ5010 by Diodes Incorporated, a high-quality Bridge Rectifier Diode that offers exceptional value and benefits. With its innovative design and superior performance, this diode ensures efficient power conversion and reliable operation. Perfect for a wide range of applications, including power supplies, motor drives, and lighting systems, the GBJ5010 provides a maximum reverse voltage of 1000V and a peak output current of 4.9A. Trust in Diodes Incorporated's expertise and choose the GBJ5010 for all your rectification needs.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY. This material provides excellent insulation and protection for the diode, making it durable and reliable.

Config

BRIDGE, 4 ELEMENTS. The bridge configuration with four elements allows for efficient rectification of AC current, making this diode suitable for many applications.

Maximum Reverse Current

10 uA. With a low maximum reverse current, this diode ensures minimal leakage and improved performance.

Package Shape

RECTANGULAR. The rectangular shape of the package provides easy integration and installation in various circuit setups.

Reverse Test Voltage

1000 V. This diode can withstand high reverse voltages, ensuring reliable operation even in demanding applications.

No. of Terminals

4. The four terminals allow for convenient connectivity and enable flexible circuit design options.

Package Style

FLANGE MOUNT. The flange mount style enhances the diode's stability when mounted, offering better mechanical support.

Maximum Operating Temperature

150 °C. With a high maximum operating temperature, this diode can withstand heat-intensive environments, ensuring stable performance.

Minimum Operating Temperature

55 °C. The diode's ability to operate in extremely low temperatures makes it suitable for various industrial and automotive applications.

Terminal Position

SINGLE. The single terminal position simplifies wiring connections and promotes ease of installation.

Minimum Breakdown Voltage

1000 V. This diode has a high minimum breakdown voltage, ensuring protection against voltage surges and spikes.

Peak Reflow Temperature °C

260. The diode's peak reflow temperature allows for safe and reliable soldering during the manufacturing process.

Reference Standard

UL RECOGNIZED. Being UL recognized certifies the diode's compliance with safety and quality standards.

Diode Type

BRIDGE RECTIFIER DIODE. This specific diode type is designed for rectifying AC voltage, making it a suitable choice for many applications.

Maximum Forward Voltage (VF)

1.1 V. The low voltage drop across the diode (VF) helps minimize power loss and improve overall efficiency.

Maximum Output Current

4.9 A. With a high maximum output current rating, this diode can handle significant electrical loads reliably.

Terminal Form

THROUGH-HOLE. The through-hole terminal form simplifies PCB assembly and ensures secure solder connections.

No. of Elements

4. Having four elements provides redundancy and improves the diode's overall reliability.

Maximum Repetitive Peak Reverse Voltage

1000 V. The diode's high maximum repetitive peak reverse voltage allows for safe and efficient rectification of high voltage signals.

No. of Phases

1. This diode is designed for single-phase AC rectification applications.

Maximum Non Repetitive Peak Forward Current

400 A. With a high maximum non-repetitive peak forward current, this diode can handle short duration power surges without damage.

Diode Element Material

SILICON. The use of silicon as the diode element material provides high efficiency and durability.

Technical Specifications

Bridge Rectifier Diodes GBJ5010 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSFM-T4

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4.9 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

1000 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

GBJ5010 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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