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FX2000012

Diodes Incorporated

FX2000012 by Diodes Incorporated

Diodes Inc. FX2000012 is a 20 MHz parallel-fundamental crystal oscillator with aging of 3 PPM/yr. It features surface mounting and operates at a drive level of 10 uW. Ideal for applications requiring precise timing in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,239 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,239

-

-

-

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,172 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,172

$1.010

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-

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AZTECH Wire

Italy . 929 parts In-Stock

1+ parts

$15.490

100+ parts

-

1k+ parts

-

10k+ parts

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929

$15.490

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,000

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Overview

Experience top-notch quality and reliability with the FX2000012 crystal oscillator from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures that each product meets the highest standards for performance and durability. Perfect for a wide range of applications, this crystal oscillator offers unparalleled value and benefits to customers looking for precise frequency control. Trust Diodes Incorporated to deliver exceptional products that exceed expectations every time.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal oscillator provides accurate and stable frequency output, making it suitable for applications with stringent frequency requirements.

Nominal Operating Frequency: 20 MHz

Operating at 20 MHz allows for high-speed processing and data transfer, making this oscillator ideal for applications requiring fast and precise timing.

Aging: 3 PPM/FIRST YEAR

With low aging rate of 3 PPM in the first year, this oscillator ensures long-term frequency stability, making it reliable for continuous operation.

Mounting Feature: SURFACE MOUNT

The surface mount design of this oscillator allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Drive Level: 10 uW

Operating at a low drive level of 10 uW, this oscillator consumes minimal power while providing consistent and accurate frequency output, making it energy-efficient.

Physical Dimension: L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

The compact size of this oscillator makes it suitable for applications with space constraints, while the precise dimensions ensure easy integration into electronic devices.

Technical Specifications

Crystal Oscillators FX2000012 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

20 MHz

Physical Dimension:

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

Trade Compliance

FX2000012 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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