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FX1020008

Diodes Incorporated

FX1020008 by Diodes Incorporated

Diodes Inc. FX1020008 is a 10.2 MHz crystal oscillator with aging of 3 PPM/yr, suitable for surface mount applications. Its compact size of L6.0xB3.5xH1.1 (mm) makes it ideal for space-constrained designs requiring low drive level of 10 uW.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,813 parts In-Stock

1+ parts

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4,813

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,117 parts In-Stock

1+ parts

$0.010

100+ parts

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1,117

$0.010

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AZTECH Wire

Italy . 144 parts In-Stock

1+ parts

$18.790

100+ parts

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144

$18.790

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Continental Prestige Electronics

USA . 3,931 parts In-Stock

1+ parts

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3,931

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Argo Parts USA

USA . 746 parts In-Stock

1+ parts

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746

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100

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Overview

Experience superior performance and reliability with the FX1020008 crystal oscillator from Diodes Incorporated. Known for their industry-leading quality and innovation, Diodes Incorporated delivers cutting-edge solutions for a wide range of applications. The FX1020008 offers exceptional value to customers with its precise frequency control and low aging rate, ensuring optimal performance for years to come. Whether you need a crystal oscillator for telecommunications, automotive, or industrial applications, trust Diodes Incorporated to provide the high-quality solutions you need. Elevate your designs with the FX1020008 and experience the difference today.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal ensures stable and accurate frequency output.

Nominal Operating Frequency: 10.2 MHz

Ideal frequency for various applications requiring precise timing.

Aging: 3 PPM/FIRST YEAR

Low aging rate ensures long-term stability and reliability.

Mounting Feature: SURFACE MOUNT

Easy and efficient installation on PCBs for compact designs.

Drive Level: 10 uW

Low power consumption for energy-efficient operation.

Physical Dimension: L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

Compact size suitable for space-constrained applications.

Technical Specifications

Crystal Oscillators FX1020008 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

10.2 MHz

Physical Dimension:

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

Trade Compliance

FX1020008 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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