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FW2400016

Diodes Incorporated

FW2400016 by Diodes Incorporated

Diodes Inc. FW2400016 crystal oscillator features 120 ohm series resistance, 24 MHz operating frequency, and 5 PPM aging. Ideal for surface mount applications requiring a drive level of 10 uW in compact L2.05XB1.65XH0.45 mm package size.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,675 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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5,675

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-

-

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Nova Conductors

Japan . 35 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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35

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,157 parts In-Stock

1+ parts

$4.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,157

$4.010

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-

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AZTECH Wire

Italy . 790 parts In-Stock

1+ parts

$10.662

100+ parts

-

1k+ parts

-

10k+ parts

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790

$10.662

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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300

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Overview

Elevate your electronic designs with the FW2400016 crystal oscillator by Diodes Incorporated. Known for their superior quality and reliability, Diodes Incorporated has crafted a product that offers unparalleled precision and performance. Ideal for a wide range of applications, this crystal oscillator provides stable and accurate frequency control, ensuring smooth operation for your electronic devices. Experience the value and benefits of Diodes Incorporated's expertise in crystal oscillators with the FW2400016, delivering exceptional results for all your design needs.

Feature Benefit Bullets

Series Resistance: 120 ohm

Low series resistance helps in reducing power consumption and ensures stable operation.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Fundamental mode crystals provide better frequency stability and lower phase noise compared to overtone crystals.

Nominal Operating Frequency: 24 MHz

Operating at 24 MHz makes it suitable for various applications requiring this specific frequency.

Aging: 5 PPM/FIRST YEAR

Low aging rate of 5 PPM ensures long-term frequency stability and reliability.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Drive Level: 10 uW

Low drive level of 10 uW helps in minimizing power consumption and heat generation.

Physical Dimension: L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

Compact size of L2.05XB1.65XH0.45 mm makes it suitable for applications where space is a constraint.

Technical Specifications

Crystal Oscillators FW2400016 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

24 MHz

Physical Dimension:

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

Series Resistance:

120 ohm

Trade Compliance

FW2400016 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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