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FR1A-13-F

Diodes Incorporated

FR1A-13-F by Diodes Incorporated

Limited Part Number Data;

Median Price

$1.400

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

FR1A-13-F by Diodes Incorporated
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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 770 parts In-Stock

1+ parts

$1.400

100+ parts

-

1k+ parts

-

10k+ parts

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770

$1.400

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-

DF Sales Co.

USA . 770 parts In-Stock

1+ parts

$1.400

100+ parts

-

1k+ parts

-

10k+ parts

-

770

$1.400

-

-

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Vyrian

USA . 2,539 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,539

-

-

-

-

Semi Source

USA . 871 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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871

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Prism Electronics

USA . 34 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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34

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 163 parts In-Stock

1+ parts

$1.139

100+ parts

-

1k+ parts

-

10k+ parts

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163

$1.139

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Northwest PG Solutions

USA . 567 parts In-Stock

1+ parts

$1.253

100+ parts

-

1k+ parts

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567

$1.253

-

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Andel Nordic

Denmark . 23 parts In-Stock

1+ parts

$10.425

100+ parts

-

1k+ parts

$10.008

10k+ parts

$10.008

23

$10.425

-

$10.008

$10.008

AZTECH Wire

Italy . 377 parts In-Stock

1+ parts

$14.970

100+ parts

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1k+ parts

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377

$14.970

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Kepictronics

USA . 41,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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41,000

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Perfect Parts

USA . 38 parts In-Stock

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38

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Technical Specifications

Additional Parts FR1A-13-F attributes and parameters. Explore more Additional Parts devices from Diodes Incorporated

Technical Specifications

Other Names:

FR1A-FDIDKR
RS1AB-FDTR-ND
FR1A-FDICT
FR1A13F
FR1A-FDITR

Speed:

Fast Recovery =< 500ns, > 200mA (Io)

Category:

Discrete Semiconductor Products
Diodes Rectifiers Single Diodes

Reverse Recovery Time (trr):

150 ns

Mounting Type:

Surface Mount

Supplier Device Package:

SMB

Standard Package:

3,000

Current - Reverse Leakage @ Vr:

5 µA @ 50 V

Package / Case:

DO-214AA, SMB

Technology:

Standard

Voltage - Forward (Vf) (Max) @ If:

1.3 V @ 1 A

Voltage - DC Reverse (Vr) (Max):

50 V

Package:

Tape & Reel (TR)
Cut Tape (CT) Digi-Reel®

Current - Average Rectified (Io):

1A

Operating Temperature - Junction:

-65°C ~ 175°C

Base Product Number:

FR1A

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

FR1A-13-F Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.0080

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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