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FQ1200007

Diodes Incorporated

FQ1200007 by Diodes Incorporated

Diodes Inc. FQ1200007 crystal oscillator offers 20 ppm frequency tolerance, 30% stability, and 120 ohm series resistance. Ideal for applications requiring a 12 MHz nominal operating frequency, such as IoT devices and communication systems. Operating temperature range from -40 to 85°C ensures reliable performance in various environments.

Median Price

$0.736

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

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$0.736

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150

$0.736

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Vyrian

USA . 8,558 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 3,767 parts In-Stock

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$0.736

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$0.721

3,767

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$0.721

Argo Parts USA

USA . 1,837 parts In-Stock

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$0.736

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1,837

$0.736

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Aztec Data Supply Inc.

USA . 4,315 parts In-Stock

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$1.290

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$1.290

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Ampacity Inc.

Singapore . 718 parts In-Stock

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$4.010

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718

$4.010

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AZTECH Wire

Italy . 613 parts In-Stock

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$14.346

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613

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QUARKTWIN TECHNOLOGY LTD

USA . 19,398 parts In-Stock

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Perfect Parts

USA . 10,080 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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870

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Overview

Unlock superior performance and reliability with the FQ1200007 crystal oscillator by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-notch quality and precision in every product. Ideal for a wide range of applications, this crystal oscillator offers unparalleled frequency stability and tolerance, ensuring seamless operation in any environment. Experience the value and benefits of this exceptional component today and elevate your projects to new heights of efficiency and accuracy.

Feature Benefit Bullets

Frequency Tolerance: 20 ppm

This product offers high frequency stability, ensuring accurate and reliable performance in applications that require precise timing.

Frequency Stability: 30 %

The frequency stability of this crystal oscillator ensures consistent performance over a wide range of operating conditions, making it suitable for varied applications.

Series Resistance: 120 ohm

The low series resistance of this crystal oscillator helps in minimizing power consumption and ensuring efficient operation.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of this crystal oscillator enables it to function reliably in extreme environmental conditions.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal design offers high frequency stability and excellent reliability, making it a preferred choice for critical applications.

Nominal Operating Frequency: 12 MHz

The 12 MHz operating frequency makes this crystal oscillator suitable for applications that require precise timing and synchronization.

Aging: 3 PPM/FIRST YEAR

The low aging rate of this crystal oscillator ensures long-term frequency stability and reliable performance over extended periods of time.

Load Capacitance: 18 pF

The specified load capacitance helps in optimizing the oscillator circuit performance and ensures stable operation under varying load conditions.

Mounting Feature: SURFACE MOUNT

The surface mount design of this crystal oscillator makes it easy to integrate into compact electronic devices and PCB layouts, saving space and simplifying assembly.

Drive Level: 10 uW

The low drive level requirement of this crystal oscillator ensures efficient power usage and reduces the overall power consumption of the electronic system.

Physical Dimension: L3.2XB2.5XH0.75 (mm)/L0.126XB0.098XH0.03 (inch)

The compact size of this crystal oscillator allows for easy integration into small form factor devices without compromising on performance or reliability.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of this crystal oscillator enables reliable performance even in high-temperature environments, ensuring long-term durability.

Technical Specifications

Crystal Oscillators FQ1200007 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT CUT; TR, 7 INCH

Crystal or Resonator Type:

Drive Level:

10 uW

Frequency Stability:

30 %

Frequency Tolerance:

Load Capacitance:

18 pF

Mounting Feature:

Nominal Operating Frequency:

12 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Physical Dimension:

L3.2XB2.5XH0.75 (mm)/L0.126XB0.098XH0.03 (inch)

Series Resistance:

120 ohm

Trade Compliance

FQ1200007 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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