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FL3840017

Diodes Incorporated

FL3840017 by Diodes Incorporated

Diodes Inc. FL3840017 crystal oscillator features 40 ohm series resistance, 38.4 MHz frequency, and 3 PPM aging. Ideal for surface mount applications requiring a drive level of 10 uW in parallel fundamental crystal type circuits.

Median Price

$0.560

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 21,538 parts In-Stock

1+ parts

$0.560

100+ parts

$0.427

1k+ parts

$0.371

10k+ parts

$0.316

21,538

$0.560

$0.427

$0.371

$0.316

DigiKey

USA . 6,329 parts In-Stock

1+ parts

$0.560

100+ parts

$0.427

1k+ parts

$0.371

10k+ parts

$0.324

6,329

$0.560

$0.427

$0.371

$0.324

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 8,975 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.191

8,975

-

-

-

$0.191

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.423

6,000

-

-

-

$0.423

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 15,168 parts In-Stock

1+ parts

$0.476

100+ parts

-

1k+ parts

-

10k+ parts

-

15,168

$0.476

-

-

-

Continental Prestige Electronics

USA . 2,030 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,030

-

-

-

-

Argo Parts USA

USA . 1,218 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

1,218

-

-

-

-

Authorized Procurement Solutions

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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200

-

-

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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50

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Overview

The FL3840017 by Diodes Incorporated is a top-quality crystal oscillator designed for precision and reliability. With a low series resistance of 40 ohm and a nominal operating frequency of 38.4 MHz, this oscillator is ideal for a wide range of applications. The GOLD OVER NICKEL terminal finish ensures long-lasting performance, while the PARALLEL - FUNDAMENTAL crystal type guarantees accurate frequency control. Customers can trust in the 3 PPM aging rate and easy SURFACE MOUNT installation. Experience the value and benefits of the FL3840017 for your electronic projects today!

Feature Benefit Bullets

Series Resistance: 40 ohm

Low series resistance ensures efficient performance and minimal power loss in the oscillator.

Terminal Finish: GOLD OVER NICKEL

Gold over nickel terminal finish provides excellent conductivity and corrosion resistance for reliable connections.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Parallel fundamental crystal resonator type offers stable and precise frequency output for accurate timing applications.

Nominal Operating Frequency: 38.4 MHz

Operating at 38.4 MHz frequency makes this oscillator suitable for a wide range of electronic devices and applications.

Aging: 3 PPM/FIRST YEAR

Low aging rate of 3 PPM per year ensures long-term frequency stability and consistent performance over time.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and secure installation on printed circuit boards, saving space and facilitating mass production.

Drive Level: 10 uW

With a low drive level of 10 uW, this oscillator consumes minimal power while delivering reliable frequency output.

Physical Dimension: L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Compact physical dimensions make this oscillator suitable for small and space-constrained electronic devices and applications.

Technical Specifications

Crystal Oscillators FL3840017 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

JESD-609 Code:

e4

Mounting Feature:

Nominal Operating Frequency:

38.4 MHz

Physical Dimension:

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Series Resistance:

40 ohm

Terminal Finish:

GOLD OVER NICKEL

Trade Compliance

FL3840017 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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