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FL260WFMT1

Diodes Incorporated

FL260WFMT1 by Diodes Incorporated

FL260WFMT1 by Diodes Inc. is a crystal oscillator with 26 MHz nominal frequency, 7 ppm tolerance, and 17% stability. Ideal for applications requiring precise timing such as telecommunications equipment and industrial automation systems.

Median Price

$0.336

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$0.336

-

-

-

Vyrian

USA . 4,260 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,260

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

$0.319

10k+ parts

$0.312

1,000

$0.336

-

$0.319

$0.312

Advanced Electronics

New Zealand . 2,465 parts In-Stock

1+ parts

$2.469

100+ parts

$2.444

1k+ parts

$2.345

10k+ parts

-

2,465

$2.469

$2.444

$2.345

-

Ampacity Inc.

Singapore . 1,337 parts In-Stock

1+ parts

$4.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,337

$4.010

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-

-

AZTECH Wire

Italy . 410 parts In-Stock

1+ parts

$8.127

100+ parts

-

1k+ parts

-

10k+ parts

-

410

$8.127

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-

-

Overview

Discover the FL260WFMT1 by Diodes Incorporated, a top-of-the-line crystal oscillator designed for precision and reliability. As a trusted manufacturer in the industry, Diodes Incorporated ensures superior quality and performance in all their products. Ideal for a variety of applications, this crystal oscillator offers unmatched frequency tolerance and stability, making it perfect for demanding environments. Experience the value and benefits of the FL260WFMT1 with its exceptional accuracy and efficiency, providing customers with a reliable solution for their needs. Elevate your projects with the FL260WFMT1 and enjoy peace of mind knowing you have a high-quality product at your disposal.

Feature Benefit Bullets

Frequency Tolerance: 7 ppm

This tight frequency tolerance ensures accurate and reliable performance in various applications.

Frequency Stability: 17%

The decent frequency stability ensures consistent operation even in challenging environments.

Series Resistance: 30 ohm

The low series resistance allows for efficient power consumption and improved signal integrity.

Minimum Operating Temperature: -40 °C

The wide range of operating temperature makes this crystal oscillator suitable for use in extreme conditions.

Terminal Finish: GOLD OVER NICKEL

The terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal ensures high frequency accuracy and stability.

Nominal Operating Frequency: 26 MHz

The ideal frequency for a range of applications, providing a good balance between performance and power consumption.

Aging: 3 PPM/FIRST YEAR

The minimal aging rate ensures consistent performance over time, reducing the need for frequent recalibration.

Load Capacitance: 12 pF

The low load capacitance allows for better control over the oscillator's frequency and stability.

Mounting Feature: SURFACE MOUNT

The surface mount design makes installation quick and easy, perfect for automated production processes.

Drive Level: 100 uW

The low drive level requirement minimizes power consumption while maintaining optimal performance.

Physical Dimension: L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

The compact size of the crystal oscillator makes it easy to integrate into various electronic devices.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature ensures reliable performance in high-temperature environments.

Technical Specifications

Crystal Oscillators FL260WFMT1 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT CUT; TR, 7 INCH

Crystal or Resonator Type:

Drive Level:

100 uW

Frequency Stability:

17 %

Frequency Tolerance:

JESD-609 Code:

e4

Load Capacitance:

12 pF

Mounting Feature:

Nominal Operating Frequency:

26 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Physical Dimension:

L3.2XB2.5XH0.68 (mm)/L0.126XB0.098XH0.027 (inch)

Series Resistance:

30 ohm

Terminal Finish:

GOLD OVER NICKEL

Trade Compliance

FL260WFMT1 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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