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FL2500273

Diodes Incorporated

FL2500273 by Diodes Incorporated

Diodes Inc. FL2500273 crystal oscillator features 60 ohm series resistance, 25 MHz frequency, and 3 PPM aging. Ideal for surface mount applications requiring a drive level of 10 uW in parallel fundamental crystal type setups.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,940 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,940

-

-

-

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Nova Conductors

Japan . 85 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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85

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,236 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,236

$2.010

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AZTECH Wire

Italy . 1,051 parts In-Stock

1+ parts

$11.480

100+ parts

-

1k+ parts

-

10k+ parts

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1,051

$11.480

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,000

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-

Overview

Experience the precision and reliability of the FL2500273 crystal oscillator from Diodes Incorporated. Crafted with top-quality materials and advanced technology, this oscillator offers unmatched performance in various applications. Whether you need superior frequency stability or low power consumption, this product delivers it all. Trust in Diodes Incorporated to provide you with a high-quality crystal oscillator that meets your needs and exceeds your expectations. Elevate your projects with the FL2500273 and unlock a world of possibilities.

Feature Benefit Bullets

Series Resistance: 60 ohm

Low series resistance allows for efficient signal transfer and stable output.

Terminal Finish: GOLD OVER NICKEL

Gold over nickel terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Parallel fundamental crystal type ensures accurate frequency generation and stable performance.

Nominal Operating Frequency: 25 MHz

Operating at 25 MHz allows for high-speed signal processing and performance.

Aging: 3 PPM/FIRST YEAR

Low aging rate of 3 PPM per year ensures frequency stability over time.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes installation easy and saves space on the PCB.

Drive Level: 10 uW

Low drive level of 10 uW helps minimize power consumption and heat generation.

Physical Dimension: L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Compact physical dimensions make this crystal oscillator suitable for applications with limited space requirements.

Technical Specifications

Crystal Oscillators FL2500273 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

JESD-609 Code:

e4

Mounting Feature:

Nominal Operating Frequency:

25 MHz

Physical Dimension:

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Series Resistance:

60 ohm

Terminal Finish:

GOLD OVER NICKEL

Trade Compliance

FL2500273 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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