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FL1380005

Diodes Incorporated

FL1380005 by Diodes Incorporated

Diodes Inc. FL1380005 is a 13.8 MHz crystal oscillator with 80 ohm series resistance and 3 PPM aging rate. Ideal for surface mount applications, it features gold over nickel terminal finish and operates at a drive level of 10 uW.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 15,258 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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15,258

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

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100+ parts

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,237 parts In-Stock

1+ parts

$4.010

100+ parts

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1,237

$4.010

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AZTECH Wire

Italy . 494 parts In-Stock

1+ parts

$9.186

100+ parts

-

1k+ parts

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494

$9.186

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QUARKTWIN TECHNOLOGY LTD

USA . 12,865 parts In-Stock

1+ parts

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100+ parts

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12,865

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Overview

Unleash the power of precision with the FL1380005 by Diodes Incorporated. Crafted with utmost quality and expertise, this crystal oscillator offers unparalleled performance in a compact package. Ideal for a wide range of applications, this product delivers consistent and reliable frequency control with minimal aging effects. Whether you're looking to enhance the efficiency of your communication systems or optimize the performance of your electronic devices, the FL1380005 is the perfect solution. Experience the value and benefits that only a trusted manufacturer like Diodes Incorporated can provide. Elevate your projects with the FL1380005 today.

Feature Benefit Bullets

Series Resistance: 80 ohm

Low series resistance ensures efficient performance and stable frequency output.

Terminal Finish: GOLD OVER NICKEL

Gold over nickel terminal finish provides excellent conductivity and corrosion resistance for reliable operation.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Parallel fundamental crystal resonator type offers precise frequency stability and high signal purity.

Nominal Operating Frequency: 13.8 MHz

Operating at 13.8 MHz allows for compatibility with various applications and systems that require this frequency.

Aging: 3 PPM/FIRST YEAR

Low aging rate of 3 PPM in the first year ensures long-term frequency accuracy and stability.

Mounting Feature: SURFACE MOUNT

Surface mount design enables easy and convenient installation in compact electronic devices.

Drive Level: 10 uW

Low drive level of 10 uW leads to energy-efficient operation and minimal power consumption.

Physical Dimension: L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Compact physical dimensions make this crystal oscillator suitable for space-constrained applications without compromising performance.

Technical Specifications

Crystal Oscillators FL1380005 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

JESD-609 Code:

e4

Mounting Feature:

Nominal Operating Frequency:

13.8 MHz

Physical Dimension:

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Series Resistance:

80 ohm

Terminal Finish:

GOLD OVER NICKEL

Trade Compliance

FL1380005 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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