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FH3200025

Diodes Incorporated

FH3200025 by Diodes Incorporated

Diodes Inc. FH3200025 crystal oscillator offers 10 ppm frequency tolerance and 10% stability, with a series resistance of 50 ohm. Ideal for applications requiring precise timing at 32 MHz, such as telecommunications equipment and industrial automation systems.

Median Price

$1.220

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,293 parts In-Stock

1+ parts

$1.220

100+ parts

$0.922

1k+ parts

$0.801

10k+ parts

$0.701

2,293

$1.220

$0.922

$0.801

$0.701

Mouser Electronics

USA . 83 parts In-Stock

1+ parts

$1.220

100+ parts

$0.923

1k+ parts

$0.802

10k+ parts

$0.625

83

$1.220

$0.923

$0.802

$0.625

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 960 parts In-Stock

1+ parts

$44.419

100+ parts

-

1k+ parts

-

10k+ parts

$42.643

960

$44.419

-

-

$42.643

Northwest PG Solutions

USA . 1,597 parts In-Stock

1+ parts

$48.861

100+ parts

-

1k+ parts

-

10k+ parts

-

1,597

$48.861

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 8,911 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,911

-

-

-

-

Overview

Experience superior performance and reliability with the FH3200025 crystal oscillator by Diodes Incorporated. As a leader in the industry, Diodes Incorporated ensures top-notch quality and precision engineering in all their products. The FH3200025 is perfect for applications requiring precise timing and stable frequency output. With a frequency tolerance of 10 ppm and frequency stability of 10%, this crystal oscillator guarantees accurate performance. Say goodbye to frequency drift and enjoy seamless operation with the FH3200025. Upgrade your electronic devices with this exceptional product today!

Feature Benefit Bullets

Frequency Tolerance: 10 ppm

High frequency accuracy ensures reliable and precise timing, making this crystal oscillator suitable for applications requiring tight timing constraints.

Frequency Stability: 10 %

Stable frequency output ensures consistent performance over time, making it ideal for applications where stability is crucial.

Series Resistance: 50 ohm

Low series resistance helps in minimizing power losses and ensures efficient operation of the oscillator.

Minimum Operating Temperature: -20 °C

Wide operating temperature range allows the crystal oscillator to function in various environmental conditions, enhancing its versatility.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Fundamental mode crystals offer high Q factors and better frequency stability, making them suitable for precision applications.

Nominal Operating Frequency: 32 MHz

The 32 MHz frequency is commonly used in various electronic devices and offers a good balance between speed and power consumption.

Aging: 3 PPM/FIRST YEAR

Low aging rate ensures long-term frequency stability, making this crystal oscillator a reliable choice for applications that require long-term accuracy.

Load Capacitance: 10 pF

The specified load capacitance ensures optimal performance of the crystal oscillator in conjunction with the connected circuitry.

Mounting Feature: SURFACE MOUNT

Surface mount technology allows for easy installation and space-saving on PCBs, making it suitable for compact electronic devices.

Drive Level: 10 uW

Low drive level requirements result in lower power consumption and make this crystal oscillator energy-efficient.

Physical Dimension: L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

Compact dimensions facilitate integration into small electronic devices, enabling design flexibility and space-saving.

Maximum Operating Temperature: 70 °C

Wide temperature range allows the crystal oscillator to operate in high-temperature environments without compromising performance.

Technical Specifications

Crystal Oscillators FH3200025 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT CUT; TR, 7 INCH

Crystal or Resonator Type:

Drive Level:

10 uW

Frequency Stability:

10 %

Frequency Tolerance:

Load Capacitance:

10 pF

Mounting Feature:

Nominal Operating Frequency:

32 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Physical Dimension:

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

Series Resistance:

50 ohm

Trade Compliance

FH3200025 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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