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FH1920004

Diodes Incorporated

FH1920004 by Diodes Incorporated

Diodes Inc. FH1920004 crystal oscillator offers 19.2 MHz frequency with 30 ppm tolerance and 30% stability. Ideal for applications requiring precise timing, it operates b/w -20 to 70°C temperatures in a compact surface mount package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,012 parts In-Stock

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4,012

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Prism Electronics

USA . 56 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 634 parts In-Stock

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$0.010

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634

$0.010

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AZTECH Wire

Italy . 220 parts In-Stock

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$9.131

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$9.131

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Bastille Electronics

Australia . 450 parts In-Stock

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Perfect Parts

USA . 56 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the FH1920004 crystal oscillator from Diodes Incorporated. Known for their superior quality and reliability, Diodes Incorporated offers a wide range of crystal oscillators that cater to various applications. With a frequency tolerance of 30 ppm and a frequency stability of 30%, this oscillator ensures precise timing in your circuits. Its compact design and surface mount feature make it easy to integrate, while its low drive level and excellent aging characteristics guarantee long-term efficiency. Trust Diodes Incorporated to provide you with the value and benefits you need for seamless operation.

Feature Benefit Bullets

Frequency Tolerance: 30 ppm

This low frequency tolerance ensures accurate and reliable frequency output.

Frequency Stability: 30 %

The stable frequency output with 30% stability ensures consistent performance over time.

Series Resistance: 70 ohm

The low series resistance of 70 ohms helps in efficient signal transmission and reduced power consumption.

Minimum Operating Temperature: -20 °C

The wide temperature range of -20°C allows for operation in various environments without risk of performance degradation.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

The parallel fundamental crystal resonator type ensures high precision and stability in frequency generation.

Nominal Operating Frequency: 19.2 MHz

The nominal frequency of 19.2 MHz is suitable for various applications requiring this specific frequency.

Aging: 3 PPM/FIRST YEAR

With low aging rate of 3 PPM per year, the oscillator maintains its performance over a long period without significant drift.

Load Capacitance: 12 pF

The load capacitance of 12 pF allows for optimal tuning and efficient energy transfer.

Mounting Feature: SURFACE MOUNT

The surface mount feature simplifies the installation and integration of the oscillator onto circuit boards.

Drive Level: 100 uW

The low drive level requirement of 100 uW results in reduced power consumption and improved energy efficiency.

Physical Dimension: L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

The compact size of 2.5x2.0x0.6 mm allows for easy integration into small electronic devices.

Maximum Operating Temperature: 70 °C

The maximum operating temperature of 70°C ensures reliable performance even in high-temperature environments.

Technical Specifications

Crystal Oscillators FH1920004 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR, 7 INCH

Crystal or Resonator Type:

Drive Level:

100 uW

Frequency Stability:

30 %

Frequency Tolerance:

Load Capacitance:

12 pF

Mounting Feature:

Nominal Operating Frequency:

19.2 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Physical Dimension:

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

Series Resistance:

70 ohm

Trade Compliance

FH1920004 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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