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F62500047

Diodes Incorporated

F62500047 by Diodes Incorporated

Diodes Inc. F62500047 is a 25MHz crystal oscillator with aging of 3PPM/yr, suitable for surface mount applications. Drive level of 10uW, compact size L6.0xB3.5xH1.2 (mm), makes it ideal for precision timing in electronic devices.

Median Price

$0.463

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 1,000 parts In-Stock

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Component Sense

UK . 3,942 parts In-Stock

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Vyrian

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Elcom Components

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Nova Conductors

Japan . 86 parts In-Stock

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Ampacity Inc.

Singapore . 406 parts In-Stock

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$4.010

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AZTECH Wire

Italy . 420 parts In-Stock

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Perfect Parts

USA . 15,680 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,744 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Netroflash

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Overview

Experience superior performance and reliability with the F62500047 crystal oscillator from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and precision in every product. Ideal for various applications, this parallel-fundamental type oscillator operates at a nominal frequency of 25 MHz, with a low aging rate of 3 PPM/first year. Its surface mount design and drive level of 10 uW make it easy to integrate into your electronic devices. Trust in the F62500047 for consistent and accurate timekeeping, ensuring optimal functionality for your projects.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal ensures stable and accurate frequency output, making it reliable for various applications.

Nominal Operating Frequency: 25 MHz

Operating at a frequency of 25 MHz allows for compatibility with many electronic devices and systems.

Aging: 3 PPM/FIRST YEAR

With low aging rate, this crystal oscillator maintains its frequency stability over time, ensuring long-term performance.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and secure installation on circuit boards, saving space and facilitating assembly.

Drive Level: 10 uW

Low drive level requirement minimizes power consumption and heat generation, making it energy-efficient and suitable for battery-operated devices.

Physical Dimension: L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

Compact size of the crystal oscillator enables integration into smaller devices without compromising on performance or functionality.

Technical Specifications

Crystal Oscillators F62500047 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

25 MHz

Physical Dimension:

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

Trade Compliance

F62500047 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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