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ES2G_HF

Diodes Incorporated

ES2G_HF by Diodes Incorporated

ES2G_HF by Diodes Inc. is a single rectifier diode with 400V reverse test voltage, 0.025us max reverse recovery time, and 5uA max reverse current. Its small outline package makes it suitable for efficiency applications in a temperature range of -55 to 150°C.

Median Price

$0.390

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,039 parts In-Stock

1+ parts

$0.390

100+ parts

$0.152

1k+ parts

$0.100

10k+ parts

$0.071

6,039

$0.390

$0.152

$0.100

$0.071

Mouser Electronics

USA . 6,619 parts In-Stock

1+ parts

$0.430

100+ parts

$0.179

1k+ parts

$0.092

10k+ parts

$0.065

6,619

$0.430

$0.179

$0.092

$0.065

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.205

5,000

-

-

-

$0.205

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 5,000 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

$0.078

5,000

$0.120

-

-

$0.078

Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Kruse

Germany . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

PUI

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 5,907 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,907

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Northwest PG Solutions

USA . 1,823 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,823

-

-

-

-

Native Components

USA . 474 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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474

-

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-

Overview

Unlock the power of efficiency with the ES2G_HF Diode by Diodes Incorporated. Designed with high-quality materials and advanced technology, this rectifier diode offers a reliable solution for various applications. Whether you're looking to improve energy savings or enhance performance, this diode provides a maximum reverse test voltage of 400V and a maximum output current of 2A. Experience the benefits of increased durability, precision, and effectiveness with the ES2G_HF, setting new standards in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring long-term reliability.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and facilitating automated assembly processes.

Maximum Reverse Recovery Time: 0.025 us

Fast reverse recovery time ensures efficient switching and helps improve overall circuit performance.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves efficiency in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, making it suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature conditions without sacrificing performance.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop helps reduce power dissipation and energy loss in the circuit.

Maximum Output Current: 2 A

Capable of handling high output currents, suitable for a variety of applications.

Technical Specifications

Diodes & Rectifiers ES2G_HF attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.025 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

ES2G_HF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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