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DTH8L06D

Diodes Incorporated

DTH8L06D by Diodes Incorporated

DTH8L06D by Diodes Inc. is a single rectifier diode with a max reverse recovery time of 0.07 us and a max output current of 8 A. It operates efficiently at temperatures ranging from -55 to 150 °C, making it suitable for various applications requiring high voltage breakdown capabilities up to 600 V.

Median Price

$0.816

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 28 parts In-Stock

1+ parts

$0.980

100+ parts

$0.538

1k+ parts

$0.346

10k+ parts

$0.327

28

$0.980

$0.538

$0.346

$0.327

DigiKey

USA . 148 parts In-Stock

1+ parts

$0.990

100+ parts

$0.435

1k+ parts

$0.354

10k+ parts

$0.328

148

$0.990

$0.435

$0.354

$0.328

Verical

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.328

10k+ parts

-

5,600

-

-

$0.328

-

RS (Exports)

UK . 450 parts In-Stock

1+ parts

-

100+ parts

$0.653

1k+ parts

$0.425

10k+ parts

-

450

-

$0.653

$0.425

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 325 parts In-Stock

1+ parts

$5.590

100+ parts

$5.560

1k+ parts

$5.540

10k+ parts

$5.520

325

$5.590

$5.560

$5.540

$5.520

Native Components

USA . 634 parts In-Stock

1+ parts

$273.130

100+ parts

$267.668

1k+ parts

$264.937

10k+ parts

$262.205

634

$273.130

$267.668

$264.937

$262.205

Northwest PG Solutions

USA . 123 parts In-Stock

1+ parts

$300.444

100+ parts

-

1k+ parts

-

10k+ parts

-

123

$300.444

-

-

-

iodParts Technologies Inc.

India . 153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

153

-

-

-

-

Overview

Discover the high-quality DTH8L06D by Diodes Incorporated, a top manufacturer in diodes & rectifiers. With its reliable performance and efficient design, this product is perfect for applications requiring precision and stability. Offering a maximum reverse test voltage of 600V and a maximum output current of 8A, this rectifier diode provides exceptional value and benefits to customers looking for a durable and high-performing solution. Upgrade your efficiency with the DTH8L06D today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.07 us

Fast reverse recovery time allows for efficient switching and reduces power loss.

Maximum Reverse Current: 8 uA

Low reverse current ensures minimal leakage, leading to higher efficiency.

Reverse Test Voltage: 600 V

High reverse test voltage capacity for reliable performance in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables functionality in diverse environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for easy installation.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC current.

Technical Specifications

Diodes & Rectifiers DTH8L06D attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Application:

EFFICIENCY

Minimum Breakdown Voltage:

600 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

8 uA

Maximum Reverse Recovery Time:

.07 us

Reverse Test Voltage:

600 V

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DTH8L06D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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