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DM5W16AQ-13

Diodes Incorporated

DM5W16AQ-13 by Diodes Incorporated

DM5W16AQ-13 by Diodes Inc. is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 16V max reverse voltage and 3600W peak power dissipation. Ideal for transient suppression applications, it operates b/w -55°C to 175°C, making it suitable for various electronic devices requiring high surge protection capabilities.

Median Price

$2.010

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 307 parts In-Stock

1+ parts

$2.690

100+ parts

$1.328

1k+ parts

$1.063

10k+ parts

-

307

$2.690

$1.328

$1.063

-

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.330

10k+ parts

-

30,000

-

-

$1.330

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 544 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

544

-

-

-

-

Northwest PG Solutions

USA . 405 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

405

-

-

-

-

Overview

Enhance your electronic designs with the DM5W16AQ-13 transient suppression device from Diodes Incorporated. As a trusted manufacturer in the industry, Diodes Incorporated delivers top-quality products that meet rigorous standards. The DM5W16AQ-13 is perfect for applications requiring reliable protection against voltage spikes, ensuring optimal performance and longevity of your electronics. With its high power dissipation and wide operating temperature range, this device offers unmatched value and peace of mind to customers. Upgrade your designs with the DM5W16AQ-13 and experience the benefits of superior transient suppression technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the components inside, ensuring reliability in various operating conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3600 W

Having a high maximum non repetitive peak reverse power dissipation value of 3600 W means that this transient suppression device can handle sudden surges or spikes in voltage without getting damaged, thus providing robust protection to the circuit.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this device can withstand elevated temperatures without compromising its performance, making it suitable for a wide range of applications.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures that the device can go through soldering processes effectively, making it easy to integrate into circuit assemblies.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient suppression of voltage spikes and transients, protecting sensitive components in the circuit from damage.

Technical Specifications

Transient Suppression Devices DM5W16AQ-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, LOW POWER LOSS

Maximum Breakdown Voltage:

19.7 V

Minimum Breakdown Voltage:

17.8 V

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-218AA

JESD-30 Code:

R-PSSO-C1

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

3600 W

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

16 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DM5W16AQ-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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