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DF1502S

Diodes Incorporated

DF1502S by Diodes Incorporated

DF1502S by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 1.5A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring small outline package style, such as power supplies and battery chargers operating b/w -65°C to 150°C.

Median Price

$0.916

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 605 parts In-Stock

1+ parts

$1.490

100+ parts

-

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$0.502

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605

$1.490

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$0.502

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Verical

USA . 1,000 parts In-Stock

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$0.341

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1,000

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$0.341

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Distributors (In-Stock)

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Vyrian

USA . 74,767 parts In-Stock

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$0.341

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$0.341

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Bristol Electronics

USA . 10,738 parts In-Stock

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$0.292

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$0.144

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$0.117

10,738

-

$0.292

$0.144

$0.117

Prism Electronics

USA . 3,108 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,329 parts In-Stock

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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500

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Microchip USA

USA . 9,528 parts In-Stock

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$4.969

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$4.969

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 48,790 parts In-Stock

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Lixinc

USA . 10,393 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,377 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Perfect Parts

USA . 3,359 parts In-Stock

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3,359

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Computer Components Inc. - USA

USA . 1,312 parts In-Stock

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GreenTree Electronics

Israel . 798 parts In-Stock

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Native Components

USA . 364 parts In-Stock

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364

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Northwest PG Solutions

USA . 27 parts In-Stock

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Overview

Discover the DF1502S by Diodes Incorporated, a top-quality bridge rectifier diode that offers reliable performance and efficiency. Manufactured by Diodes Incorporated, a trusted name in the industry, this product is designed for a wide range of applications. With its compact package and high operating temperature range, the DF1502S provides exceptional value to customers looking for a durable and versatile solution. Trust Diodes Incorporated to deliver superior products like the DF1502S that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and stable performance even in harsh environments.

Minimum Breakdown Voltage: 200 V

High breakdown voltage rating offers protection against voltage spikes and surges, enhancing the reliability of the circuit.

Maximum Output Current: 1.5 A

Capable of handling a maximum output current of 1.5 A, making it suitable for a variety of applications.

Technical Specifications

Bridge Rectifier Diodes DF1502S attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Additional Features:

UL RECOGNIZED

Minimum Breakdown Voltage:

200 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DF1502S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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