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DESD1P0RFWQ-7

Diodes Incorporated

DESD1P0RFWQ-7 by Diodes Incorporated

DESD1P0RFWQ-7 by Diodes Inc. is a Trans Voltage Suppressor Diode with 70V max repetitive peak reverse voltage and 4V max clamping voltage. It features avalanche technology, matte tin terminal finish, and operates b/w -65°C to 150°C. Ideal for transient suppression in automotive applications due to AEC-Q101 compliance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 49,000 parts In-Stock

1+ parts

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49,000

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Vyrian

USA . 2,087 parts In-Stock

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2,087

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 939 parts In-Stock

1+ parts

$1.010

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939

$1.010

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AZTECH Wire

Italy . 775 parts In-Stock

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$12.021

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775

$12.021

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Kepictronics

USA . 125,600 parts In-Stock

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125,600

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Perfect Parts

USA . 14,380 parts In-Stock

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14,380

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Continental Prestige Electronics

USA . 6,681 parts In-Stock

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6,681

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Argo Parts USA

USA . 4,607 parts In-Stock

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4,607

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Enhance the reliability of your electronic systems with the DESD1P0RFWQ-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-quality transient suppression devices that provide superior protection against voltage spikes. Ideal for a wide range of applications, this series-connected, center tap device offers exceptional performance and durability. Experience peace of mind knowing that your electronics are safeguarded with the DESD1P0RFWQ-7, providing unmatched value and peace of mind for all your projects. Trust in Diodes Incorporated for unparalleled quality and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the device, making it suitable for various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connection and center tap design with 2 elements allow for efficient transient suppression and enhanced performance.

Surface Mount: YES

Being surface mountable makes installation of the device easier and saves valuable board space in compact circuit designs.

Package Shape: RECTANGULAR

The rectangular shape of the package enables easy integration into circuit layouts and enhances the overall aesthetics of the design.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the device to function effectively in cold environments without any issues.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures a reliable connection with the circuit board.

Maximum Power Dissipation: 0.2 W

With a low power dissipation rating, the device operates efficiently without generating excess heat.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for easy and reliable soldering during assembly processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode ensures effective transient suppression for protecting sensitive electronic components.

Technical Specifications

Transient Suppression Devices DESD1P0RFWQ-7 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Clamping Voltage:

4 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DESD1P0RFWQ-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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