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DDZ9717T-7

Diodes Incorporated

DDZ9717T-7 by Diodes Incorporated

ZENER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 105,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.052

105,000

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$0.052

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Inventory MP

USA . 19,551 parts In-Stock

1+ parts

-

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1k+ parts

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19,551

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-

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Bristol Electronics

USA . 19,551 parts In-Stock

1+ parts

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19,551

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Vyrian

USA . 1,093 parts In-Stock

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1,093

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 37,955 parts In-Stock

1+ parts

$0.044

100+ parts

-

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37,955

$0.044

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Native Components

USA . 820 parts In-Stock

1+ parts

$0.408

100+ parts

-

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10k+ parts

$0.392

820

$0.408

-

-

$0.392

Northwest PG Solutions

USA . 1,163 parts In-Stock

1+ parts

$0.449

100+ parts

-

1k+ parts

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10k+ parts

$0.396

1,163

$0.449

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-

$0.396

AZTECH Wire

Italy . 53 parts In-Stock

1+ parts

$13.330

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53

$13.330

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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30,000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Perfect Parts

USA . 3,127 parts In-Stock

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3,127

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GreenTree Electronics

Israel . 2,792 parts In-Stock

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2,792

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Technical Specifications

Zener Diodes DDZ9717T-7 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Nominal Reference Voltage:

43 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

DDZ9717T-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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