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DDZ33S-7

Diodes Incorporated

DDZ33S-7 by Diodes Incorporated

DDZ33S-7 by Diodes Inc. is a Zener diode with 33V nominal voltage, 2.5% voltage tolerance, and 75 ohm dynamic impedance. It operates b/w -65 to 150°C, has a power dissipation of 0.2W, and is suitable for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 8,190 parts In-Stock

1+ parts

$0.170

100+ parts

$0.054

1k+ parts

$0.052

10k+ parts

$0.030

8,190

$0.170

$0.054

$0.052

$0.030

Mouser Electronics

USA . 2,738 parts In-Stock

1+ parts

$0.170

100+ parts

$0.054

1k+ parts

$0.052

10k+ parts

$0.034

2,738

$0.170

$0.054

$0.052

$0.034

Verical

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

84,000

-

-

-

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

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-

1k+ parts

-

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500

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 22,871 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

22,871

$0.025

-

-

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Modulus Dynamics

Lithuania . 27,361 parts In-Stock

1+ parts

$0.101

100+ parts

$0.101

1k+ parts

$0.101

10k+ parts

-

27,361

$0.101

$0.101

$0.101

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Corohmni

South Africa . 298 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

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298

$0.179

-

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$0.210

100+ parts

$0.191

1k+ parts

$0.172

10k+ parts

-

900

$0.210

$0.191

$0.172

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Argo Parts USA

USA . 4,290 parts In-Stock

1+ parts

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4,290

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Continental Prestige Electronics

USA . 394 parts In-Stock

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394

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Aranea Global

USA . 100 parts In-Stock

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100+ parts

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100

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Overview

Discover the DDZ33S-7 by Diodes Incorporated, a top-notch Zener diode that offers unrivaled quality and reliability. With a wide range of applications, this small outline package is perfect for various electronic devices. Customers will benefit from its precise voltage regulation, low dynamic impedance, and high power dissipation. Trust in Diodes Incorporated's expertise in semiconductor technology to deliver a product that exceeds expectations. Add the DDZ33S-7 to your design for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the diode durable and resistant to environmental factors, ensuring a longer lifespan.

Working Test Current: 5 mA

With a working test current of 5 mA, this diode is suitable for a variety of low-power applications.

Surface Mount: YES

Being surface mountable makes installation easier and allows for more compact circuit designs.

Maximum Voltage Tolerance: 2.5 %

The tight voltage tolerance of 2.5% ensures consistent and reliable performance in voltage regulation applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand high temperature environments.

Maximum Dynamic Impedance: 75 ohm

Low dynamic impedance of 75 ohm helps in maintaining stable voltage regulation.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable electrical connections.

Maximum Power Dissipation: 0.2 W

The high power dissipation rating of 0.2 W enables the diode to handle moderate power levels effectively.

Nominal Reference Voltage: 33 V

With a nominal reference voltage of 33 V, this diode is suitable for applications requiring precise voltage regulation.

Technical Specifications

Zener Diodes DDZ33S-7 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

75 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

33 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.5 %

Working Test Current:

5 mA

Trade Compliance

DDZ33S-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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