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D5V0L1B2LP4-7B

Diodes Incorporated

D5V0L1B2LP4-7B by Diodes Incorporated

D5V0L1B2LP4-7B by Diodes Inc. is a single, bidirectional transient suppression device with a max clamping voltage of 14V. It has a breakdown voltage of 7V and can handle a max non-repetitive peak reverse power dissipation of 84W. This diode is commonly used for surge protection in various electronic applications.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10,000 parts In-Stock

1+ parts

$0.100

100+ parts

$0.040

1k+ parts

$0.038

10k+ parts

$0.035

10,000

$0.100

$0.040

$0.038

$0.035

Mouser Electronics

USA . 5,690 parts In-Stock

1+ parts

$0.110

100+ parts

-

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-

5,690

$0.110

-

-

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Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.038

10k+ parts

$0.035

10,000

-

-

$0.038

$0.035

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 22 parts In-Stock

1+ parts

$0.069

100+ parts

-

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22

$0.069

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Cyclops Electronics Ltd

UK . 600,000 parts In-Stock

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600,000

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Vyrian

USA . 206,499 parts In-Stock

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206,499

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NAC Semi

USA . 50,000 parts In-Stock

1+ parts

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$0.040

50,000

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-

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$0.040

ACDS - Activité Composants Distribution Service

France . 10,000 parts In-Stock

1+ parts

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10,000

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Dan-Mar Components

USA . 10,000 parts In-Stock

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10,000

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-

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Bristol Electronics

USA . 9,855 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.090

10k+ parts

$0.045

9,855

-

$0.150

$0.090

$0.045

Sunrise Surplus Inc.

USA . 15 parts In-Stock

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15

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Distributors (Availability)

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Ampacity Inc.

Singapore . 181,917 parts In-Stock

1+ parts

$0.022

100+ parts

-

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181,917

$0.022

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.033

100+ parts

$0.030

1k+ parts

$0.027

10k+ parts

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150

$0.033

$0.030

$0.027

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Argo Parts USA

USA . 3,142 parts In-Stock

1+ parts

$0.069

100+ parts

-

1k+ parts

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10k+ parts

$0.067

3,142

$0.069

-

-

$0.067

Continental Prestige Electronics

USA . 1,598 parts In-Stock

1+ parts

$0.069

100+ parts

-

1k+ parts

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10k+ parts

$0.068

1,598

$0.069

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-

$0.068

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.069

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100

$0.069

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Aztec Data Supply Inc.

USA . 336 parts In-Stock

1+ parts

$0.113

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336

$0.113

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Modulus Dynamics

Lithuania . 34,492 parts In-Stock

1+ parts

$0.188

100+ parts

$0.188

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$0.188

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34,492

$0.188

$0.188

$0.188

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Corohmni

South Africa . 33 parts In-Stock

1+ parts

$0.198

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33

$0.198

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Component Stockers USA

USA . 69,616 parts In-Stock

1+ parts

$0.320

100+ parts

$0.090

1k+ parts

$0.040

10k+ parts

$0.030

69,616

$0.320

$0.090

$0.040

$0.030

Epart123

USA . 200,000 parts In-Stock

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$0.039

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$0.039

Kepictronics

USA . 150,000 parts In-Stock

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Perfect Parts

USA . 78,301 parts In-Stock

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Lixinc

USA . 10,577 parts In-Stock

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10,577

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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$0.043

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$0.043

Cyclops Electronics Ltd (Excess)

UK . 5,700 parts In-Stock

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5,700

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Glotronic Ltd.

UK . 4,560 parts In-Stock

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4,560

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Looking for a reliable and high-quality transient suppression device? Look no further than the D5V0L1B2LP4-7B by Diodes Incorporated. As a renowned manufacturer in the industry, Diodes Incorporated brings you a product that offers exceptional value, benefits, and advantages. With its bidirectional polarity and avalanche technology, this chip carrier style device provides superior protection against voltage surges and transients. Whether you need it for industrial applications or electronic equipment, trust the D5V0L1B2LP4-7B to deliver optimal performance and peace of mind. Upgrade your protection today with Diodes Incorporated!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ideal for applications where weight and longevity are important factors.

Maximum Non Repetitive Peak Reverse Power Dissipation: 84 W

The high peak power dissipation capability ensures that the device can handle sudden spikes in voltage without being damaged, offering reliable protection to connected equipment.

Nominal Breakdown Voltage: 7 V

The nominal breakdown voltage of 7V provides an effective level of protection against transient voltage spikes, safeguarding connected circuits and components.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the device to operate efficiently in a wide range of thermal conditions, making it versatile for various applications.

Reference Standard: IEC-61000-4-5

Compliance with the IEC-61000-4-5 standard ensures that the device meets international quality and safety requirements, giving users peace of mind about its performance and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient and effective suppression of transient voltage spikes, offering reliable protection to sensitive electronic equipment.

Technical Specifications

Transient Suppression Devices D5V0L1B2LP4-7B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

14 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

84 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

D5V0L1B2LP4-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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