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D3V3H1B2LP-7B

Diodes Incorporated

D3V3H1B2LP-7B by Diodes Incorporated

D3V3H1B2LP-7B by Diodes Inc. is a single bidirectional transient voltage suppressor diode with 5.15V breakdown voltage, 380W peak reverse power dissipation, and 9.5V max clamping voltage. Ideal for protecting sensitive electronics from voltage spikes in applications like consumer electronics and industrial equipment.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,499 parts In-Stock

1+ parts

$0.280

100+ parts

$0.074

1k+ parts

-

10k+ parts

$0.069

1,499

$0.280

$0.074

-

$0.069

Verical

USA . 900,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

900,000

-

-

-

$0.060

Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

10,000

-

-

-

$0.060

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.113

20,000

-

-

-

$0.113

Semtec, LLC

USA . 19,955 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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19,955

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Nova Conductors

Japan . 56 parts In-Stock

1+ parts

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56

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 244,451 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

244,451

$0.051

-

-

-

Corohmni

South Africa . 160 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

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160

$0.063

-

-

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Lixinc

USA . 13,015 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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13,015

-

-

-

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

-

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Argo Parts USA

USA . 4,424 parts In-Stock

1+ parts

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100+ parts

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4,424

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Continental Prestige Electronics

USA . 2,955 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,955

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-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,000

-

-

-

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Overview

Enhance your electronic devices with the D3V3H1B2LP-7B by Diodes Incorporated, a top-of-the-line transient suppression device that guarantees superior quality and reliability. Perfect for a wide range of applications, this product offers unmatched protection against voltage spikes and surges, ensuring the longevity and efficiency of your equipment. With advanced technology and a durable design, this diode provides peace of mind while maximizing performance. Upgrade to the D3V3H1B2LP-7B today and experience the unparalleled value it brings to your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 380 W

High power dissipation capability allows the device to handle surges and transients effectively.

Nominal Breakdown Voltage: 5.15 V

Accurate breakdown voltage ensures reliable protection against overvoltage conditions.

Maximum Reverse Current: 0.5 uA

Low reverse current ensures minimal power loss and high efficiency.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures functionality in various environments.

Reference Standard: IEC-61000-4-2, IEC-61000-4-5

Compliance with industry standards ensures quality and reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient suppression applications, providing effective protection.

Technical Specifications

Transient Suppression Devices D3V3H1B2LP-7B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

6.5 V

Minimum Breakdown Voltage:

3.8 V

Nominal Breakdown Voltage:

5.15 V

Maximum Clamping Voltage:

9.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

380 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

IEC-61000-4-2, IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

D3V3H1B2LP-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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