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D26V0S1U2LP20-7

Diodes Incorporated

D26V0S1U2LP20-7 by Diodes Incorporated

D26V0S1U2LP20-7 by Diodes Inc. is a unidirectional Trans Voltage Suppressor diode with 26V max repetitive peak reverse voltage and 4800W max non-repetitive peak reverse power dissipation. It is used for transient suppression in applications requiring protection against voltage spikes, meeting IEC-61000-4-2 standards.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.400

100+ parts

$0.154

1k+ parts

$0.103

10k+ parts

$0.064

3,000

$0.400

$0.154

$0.103

$0.064

DigiKey

USA . 1,818 parts In-Stock

1+ parts

$0.400

100+ parts

$0.156

1k+ parts

$0.103

10k+ parts

$0.072

1,818

$0.400

$0.156

$0.103

$0.072

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.056

12,000

-

-

-

$0.056

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 115 parts In-Stock

1+ parts

$194.290

100+ parts

-

1k+ parts

-

10k+ parts

$186.518

115

$194.290

-

-

$186.518

Northwest PG Solutions

USA . 1,911 parts In-Stock

1+ parts

$213.719

100+ parts

-

1k+ parts

-

10k+ parts

-

1,911

$213.719

-

-

-

Overview

Experience peace of mind with the D26V0S1U2LP20-7 by Diodes Incorporated, a top-quality transient suppression device that guarantees superior protection against voltage spikes. Manufactured by the trusted name in electronic components, this product offers unmatched reliability and performance. Ideal for a wide range of applications, this single-config chip carrier is designed to withstand extreme temperatures and provide maximum power dissipation. Say goodbye to worries about breakdown voltage with this unidirectional diode that meets IEC-61000-4-2 standards. Invest in the D26V0S1U2LP20-7 for unbeatable value and safeguard your electronics with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation properties and protects the internal components from external elements, making the product durable and reliable.

Maximum Non Repetitive Peak Reverse Power Dissipation: 4800 W

With a high peak reverse power dissipation of 4800 W, this transient suppression device can effectively handle large power surges and protect sensitive electronics from damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that the device can operate reliably in a wide range of environmental conditions, making it suitable for various applications.

Minimum Breakdown Voltage: 28 V

The low minimum breakdown voltage of 28 V ensures that the device activates quickly and provides effective transient suppression when voltage levels exceed the threshold, protecting connected equipment.

Reference Standard: IEC-61000-4-2

Compliance with the IEC-61000-4-2 standard ensures that the transient suppression device meets industry requirements for electromagnetic compatibility, making it a trustworthy choice for applications where interference needs to be minimized.

Technical Specifications

Transient Suppression Devices D26V0S1U2LP20-7 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

31.9 V

Minimum Breakdown Voltage:

28 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

4800 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

26 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

D26V0S1U2LP20-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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