Loading...

D22V0S1U6LP2018-7

Diodes Incorporated

D22V0S1U6LP2018-7 by Diodes Incorporated

D22V0S1U6LP2018-7 by Diodes Inc. is a TRANS VOLTAGE SUPPRESSOR DIODE with 22V VRWM, 27V VBR, and 5460W PPK. It is used for transient suppression in applications requiring protection against voltage spikes. The device comes in a small outline package with nickel palladium gold finish and operates b/w -55°C to 150°C.

Median Price

$0.460

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10 parts In-Stock

1+ parts

$0.460

100+ parts

$0.209

1k+ parts

$0.145

10k+ parts

$0.106

10

$0.460

$0.209

$0.145

$0.106

DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.480

100+ parts

$0.225

1k+ parts

$0.142

10k+ parts

$0.112

3,000

$0.480

$0.225

$0.142

$0.112

Verical

USA . 435,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.106

435,000

-

-

-

$0.106

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.068

100+ parts

$0.062

1k+ parts

$0.056

10k+ parts

-

10

$0.068

$0.062

$0.056

-

Corohmni

South Africa . 84 parts In-Stock

1+ parts

$0.119

100+ parts

-

1k+ parts

-

10k+ parts

-

84

$0.119

-

-

-

Native Components

USA . 539 parts In-Stock

1+ parts

$0.300

100+ parts

-

1k+ parts

-

10k+ parts

$0.288

539

$0.300

-

-

$0.288

Northwest PG Solutions

USA . 723 parts In-Stock

1+ parts

$0.330

100+ parts

-

1k+ parts

-

10k+ parts

$0.291

723

$0.330

-

-

$0.291

Overview

Experience superior transient suppression with the D22V0S1U6LP2018-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality products like this single-configured device designed for various applications. Protect your circuits with ease using this high-performance transient suppression device, featuring a maximum power dissipation of 5460 W and a minimum breakdown voltage of 24 V. Trust in the value and benefits that Diodes Incorporated provides to customers looking for reliable solutions in transient protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, allowing it to withstand various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 5460 W

High power dissipation capability ensures the device can handle surges and transients effectively without getting damaged.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures a reliable electrical connection and prevents corrosion, extending the lifespan of the device.

Minimum Breakdown Voltage: 24 V

Provides protection by clamping voltages above the breakdown voltage, preventing damage to sensitive components.

Reference Standard: IEC-61000-4-2

Compliance with industry standards ensures reliability and performance of the device in various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, offering efficient protection against voltage surges and spikes.

Technical Specifications

Transient Suppression Devices D22V0S1U6LP2018-7 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

27 V

Minimum Breakdown Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

5460 W

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.9 W

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

22 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

D22V0S1U6LP2018-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6