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BZX84C3V9S-7-F

Diodes Incorporated

BZX84C3V9S-7-F by Diodes Incorporated

BZX84C3V9S-7-F by Diodes Inc. is a Zener diode with 3.9V nominal voltage, 5mA test current, and 90 ohm dynamic impedance. It's used in applications requiring precise voltage regulation like power supplies and voltage references due to its small outline package and unidirectional polarity.

Median Price

$0.047

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 24,000 parts In-Stock

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$0.047

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$0.047

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Vyrian

USA . 5,795 parts In-Stock

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5,795

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Bristol Electronics

USA . 1,500 parts In-Stock

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1,500

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Atlantic Semiconductor

USA . 1,500 parts In-Stock

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1,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 194 parts In-Stock

1+ parts

$6.572

100+ parts

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$6.309

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$6.309

194

$6.572

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$6.309

$6.309

AZTECH Wire

Italy . 1,193 parts In-Stock

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$12.710

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Eastek

USA . 3,000 parts In-Stock

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3,000

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Northwest PG Solutions

USA . 2,356 parts In-Stock

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Native Components

USA . 217 parts In-Stock

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Perfect Parts

USA . 3 parts In-Stock

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Overview

Unleash the power of precision with the BZX84C3V9S-7-F Zener Diode from Diodes Incorporated. Crafted with expertise and innovation, this high-quality component offers unparalleled reliability and accuracy for a wide range of applications. Whether you're in need of voltage regulation, signal conditioning, or surge protection, the BZX84C3V9S-7-F is the perfect solution. Experience the value and benefits that only Diodes Incorporated can provide, and elevate your projects to new heights with this exceptional Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, ensuring a longer lifespan.

Working Test Current: 5 mA

Ideal for low power applications, ensuring efficient performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Voltage Tolerance: 5.13 %

Ensures precise voltage regulation, maintaining stability in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various operating environments.

Maximum Power Dissipation: 0.2 W

Efficiently handles power dissipation to prevent overheating.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation applications, ensuring accurate voltage output.

Nominal Reference Voltage: 3.9 V

Provides a stable reference voltage for precise regulation in circuits.

Diode Element Material: SILICON

Offers consistent and reliable performance over time, making it a durable choice.

Technical Specifications

Zener Diodes BZX84C3V9S-7-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

90 ohm

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.9 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.13 %

Working Test Current:

5 mA

Trade Compliance

BZX84C3V9S-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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