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BZT585B12TQ-7

Diodes Incorporated

BZT585B12TQ-7 by Diodes Incorporated

BZT585B12TQ-7 by Diodes Inc. is a Zener diode with 12V nominal reference voltage, 8V max reverse voltage, and 5mA working test current. It is ideal for applications requiring precise voltage regulation in automotive electronics due to its AEC-Q101 compliance and small outline package style.

Median Price

$0.164

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,207 parts In-Stock

1+ parts

$0.300

100+ parts

$0.132

1k+ parts

$0.064

10k+ parts

$0.033

6,207

$0.300

$0.132

$0.064

$0.033

Verical

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

84,000

-

-

-

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,481 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,481

-

-

-

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

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1k+ parts

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750

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 83,861 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

83,861

$0.025

-

-

-

Semicontronic

India . 83,632 parts In-Stock

1+ parts

$0.025

100+ parts

$0.024

1k+ parts

$0.024

10k+ parts

-

83,632

$0.025

$0.024

$0.024

-

Aztec Data Supply Inc.

USA . 4,992 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

4,992

$0.080

-

-

-

Corohmni

South Africa . 888 parts In-Stock

1+ parts

$0.107

100+ parts

-

1k+ parts

-

10k+ parts

-

888

$0.107

-

-

-

AZTECH Wire

Italy . 118 parts In-Stock

1+ parts

$20.020

100+ parts

-

1k+ parts

-

10k+ parts

-

118

$20.020

-

-

-

Argo Parts USA

USA . 2,440 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,440

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Continental Prestige Electronics

USA . 1,139 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,139

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-

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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50

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Overview

Unlock precision and reliability with the BZT585B12TQ-7 Zener Diode by Diodes Incorporated. Designed with cutting-edge technology, this small outline package offers a nominal reference voltage of 12V and a maximum reverse current of 0.1uA, ensuring optimal performance in various applications. Whether you're in the automotive industry or telecommunications sector, this Zener Diode provides unparalleled value and efficiency with its 2% voltage tolerance and 150 ohm knee impedance. Trust Diodes Incorporated to deliver top-notch quality and innovation for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability for long-term use.

Working Test Current: 5 mA

With a test current of 5 mA, this Zener diode provides stable and consistent performance in various circuit applications.

Surface Mount: YES

Being surface mountable makes installation easy and convenient, especially in compact electronic devices.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current of 0.1 uA indicates a high level of efficiency and minimal leakage in the diode.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high temperatures, ensuring reliability in harsh environments.

Maximum Power Dissipation: 0.35 W

The high maximum power dissipation of 0.35 W allows the diode to handle high power levels without risk of damage.

Nominal Reference Voltage: 12 V

The 12 V nominal reference voltage makes this Zener diode suitable for voltage regulation and stabilization in various electronic circuits.

Technical Specifications

Zener Diodes BZT585B12TQ-7 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Knee Impedance:

150 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.35 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

12 V

Maximum Repetitive Peak Reverse Voltage:

8 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

8 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

9.5 mV/Cel

Maximum Voltage Tolerance:

2 %

Working Test Current:

5 mA

Trade Compliance

BZT585B12TQ-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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