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BZT52C5V1LP-7B

Diodes Incorporated

BZT52C5V1LP-7B by Diodes Incorporated

BZT52C5V1LP-7B by Diodes Inc. is a Zener diode with 5.1V nominal reference voltage, 60 ohm max dynamic impedance, and 5 mA working test current. It is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small chip carrier package style and unidirectional polarity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 55,000 parts In-Stock

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Vyrian

USA . 13,839 parts In-Stock

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Nova Conductors

Japan . 63 parts In-Stock

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63

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 292 parts In-Stock

1+ parts

$0.026

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292

$0.026

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Corohmni

South Africa . 765 parts In-Stock

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$0.066

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765

$0.066

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Ampacity Inc.

Singapore . 1,056 parts In-Stock

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$1.010

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1,056

$1.010

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AZTECH Wire

Italy . 837 parts In-Stock

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$14.697

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837

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Kepictronics

USA . 100,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,702 parts In-Stock

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Argo Parts USA

USA . 1,631 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the BZT52C5V1LP-7B Zener Diode by Diodes Incorporated. Designed with precision in mind, this chip carrier package offers superior performance and efficiency for a wide range of applications. Whether you're in need of voltage regulation or protection against electrical surges, this product delivers value and peace of mind. Trust in Diodes Incorporated's expertise to provide you with a top-of-the-line solution that meets your needs. Elevate your projects with the BZT52C5V1LP-7B today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the product durable and resistant to external factors, ensuring a longer lifespan.

Working Test Current: 5 mA

The high working test current of 5 mA allows for reliable performance in various applications.

Surface Mount: YES

The surface mount feature enables easy installation and space-saving on PCBs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the diode can function in demanding environments.

Nominal Reference Voltage: 5.1 V

The precise nominal reference voltage of 5.1 V ensures accurate voltage regulation in circuits.

Technical Specifications

Zener Diodes BZT52C5V1LP-7B attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

60 ohm

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.88 %

Working Test Current:

5 mA

Trade Compliance

BZT52C5V1LP-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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