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BZT52C16-7-F

Diodes Incorporated

BZT52C16-7-F by Diodes Incorporated

BZT52C16-7-F by Diodes Inc. is a Zener diode with 16V nominal reference voltage, 5mA test current, and 11.2V reverse test voltage. It is ideal for applications requiring precise voltage regulation in compact electronic circuits due to its small outline package and low dynamic impedance of 40 ohm at a max power dissipation of 0.37W.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Verical

USA . 453,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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Element14

Singapore . 2,595 parts In-Stock

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$0.053

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$0.052

2,595

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$0.052

Distributors (In-Stock)

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Nova Conductors

Japan . 93 parts In-Stock

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TME

Poland . 64 parts In-Stock

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Maritex

Poland . 42,959 parts In-Stock

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$0.257

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$0.061

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$0.032

Vyrian

USA . 368,174 parts In-Stock

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IBS Electronics

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Chip Stock

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NAC Semi

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Bristol Electronics

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Semi Source

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Atlantic Semiconductor

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J2 Sourcing AB

Sweden . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Rutronik

Germany . 3,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 3,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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ComSIT USA

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Dan-Mar Components

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Inventory MP

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QIE Inc.

USA . 2,330 parts In-Stock

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Goldney Electronics S.L.

Spain . 1,533 parts In-Stock

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Sensible Micro Corp

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Prism Electronics

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Aztec Data Supply Inc.

USA . 4,521 parts In-Stock

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$0.012

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Ampacity Inc.

Singapore . 347,626 parts In-Stock

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Semicontronic

India . 309,933 parts In-Stock

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Aranea Global

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Argo Parts USA

USA . 4,325 parts In-Stock

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Corohmni

South Africa . 98 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 54,000 parts In-Stock

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Glotronic Ltd.

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Futuretech Components

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 5,439 parts In-Stock

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Eastek

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Metaverse IC Inc.

Canada . 1,762 parts In-Stock

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Formix International (Excess)

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Kepictronics

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Overview

Elevate your electronic designs with the BZT52C16-7-F Zener Diode by Diodes Incorporated. Known for their superior quality and reliability, Diodes Incorporated delivers cutting-edge technology that ensures optimal performance in various applications. This small outline zener diode offers customers a highly efficient solution with a nominal reference voltage of 16V, maximum power dissipation of 0.37W, and a low reverse test voltage of 11.2V. Whether you're looking to regulate voltage or protect circuits from overvoltage, the BZT52C16-7-F provides the value, benefits, and advantages you need for your next project. Experience the difference with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Working Test Current: 5 mA

Optimal current for testing and operation of the diode, ensuring reliability.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving time and effort.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and efficient operation.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments.

Nominal Reference Voltage: 16 V

Provides a stable reference voltage for precise voltage regulation in circuits.

Technical Specifications

Zener Diodes BZT52C16-7-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Knee Impedance:

200 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.37 W

Qualification:

Not Qualified

Nominal Reference Voltage:

16 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

11.2 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

14 mV/Cel

Maximum Voltage Tolerance:

5.56 %

Working Test Current:

5 mA

Trade Compliance

BZT52C16-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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