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BR351

Diodes Incorporated

BR351 by Diodes Incorporated

Diodes Inc. BR351 is a 4-element bridge rectifier diode with max. operating temp of 150°C, VF of 1V, and output current of 35A. Ideal for applications requiring high voltage rectification like power supplies and motor drives due to its max. reverse voltage of 100V and non-repetitive peak forward current of 400A.

Median Price

$4.900

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 979 parts In-Stock

1+ parts

$4.900

100+ parts

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979

$4.900

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 340 parts In-Stock

1+ parts

$1.330

100+ parts

$1.050

1k+ parts

$0.880

10k+ parts

-

340

$1.330

$1.050

$0.880

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Lakeview Electronics

USA . 67 parts In-Stock

1+ parts

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67

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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5,000

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Northwest PG Solutions

USA . 1,973 parts In-Stock

1+ parts

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1,973

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Native Components

USA . 742 parts In-Stock

1+ parts

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742

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Overview

Unlock the power of efficiency and reliability with the BR351 bridge rectifier diode from Diodes Incorporated. With a maximum output current of 35A and a maximum repetitive peak reverse voltage of 100V, this versatile component is ideal for a wide range of applications. Whether you're in need of reliable performance in industrial machinery or high-quality power supply design, the BR351 delivers unparalleled quality and value. Trust Diodes Incorporated to provide cutting-edge technology that exceeds expectations, every time.

Feature Benefit Bullets

Config BRIDGE, 4 ELEMENTS

Having 4 elements allows for efficient conversion of AC to DC power, providing a stable output.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this bridge rectifier diode can withstand heat and operate reliably in various environments.

Diode Type: BRIDGE RECTIFIER DIODE

Bridge rectifier diodes are known for their high efficiency and low power loss, making them ideal for power conversion applications.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop of 1V ensures minimal power loss and efficient energy conversion.

Maximum Output Current: 35 A

With a high maximum output current of 35A, this bridge rectifier diode can handle heavy loads and provide stable power output.

No. of Elements: 4

Having 4 elements increases the reliability and efficiency of the bridge rectifier diode, ensuring smooth power conversion.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage of 100V allows for reliable and safe operation in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 400 A

The high maximum non-repetitive peak forward current of 400A ensures the bridge rectifier diode can handle sudden surges in current without damage.

Technical Specifications

Bridge Rectifier Diodes BR351 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Config:

BRIDGE, 4 ELEMENTS

Maximum Forward Voltage (VF):

1 V

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

35 A

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Trade Compliance

BR351 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-278-5935, 5961012785935

NIIN

012785935

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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