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BAV99BRLP-7

Diodes Incorporated

BAV99BRLP-7 by Diodes Incorporated

BAV99BRLP-7 by Diodes Inc. is a rectifier diode with 2 elements in 2 banks, featuring a max reverse recovery time of 0.004 us and max output current of 0.3 A. It operates b/w -65 to 150 °C and has a peak reflow temp of 260°C. Ideal for applications requiring fast switching and low power dissipation in small outline packages.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$0.120

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Chip Stock

USA . 27,500 parts In-Stock

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Vyrian

USA . 5,095 parts In-Stock

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VNN

France . 841 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 463 parts In-Stock

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$0.039

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$0.039

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Netroflash

USA . 2,000 parts In-Stock

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$0.120

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$0.114

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$0.112

2,000

$0.120

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$0.112

Ampacity Inc.

Singapore . 901 parts In-Stock

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$1.010

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901

$1.010

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AZTECH Wire

Italy . 278 parts In-Stock

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$10.782

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Perfect Parts

USA . 31,600 parts In-Stock

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Lixinc

USA . 4,687 parts In-Stock

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Argo Parts USA

USA . 4,393 parts In-Stock

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Continental Prestige Electronics

USA . 3,473 parts In-Stock

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iodParts Technologies Inc.

India . 2,064 parts In-Stock

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USA . 620 parts In-Stock

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620

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Microchip USA

USA . 303 parts In-Stock

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Robosynatics

Brazil . 150 parts In-Stock

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Lucentia Tech

USA . 150 parts In-Stock

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$0.110

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$0.102

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$0.102

150

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$0.110

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$0.102

Overview

Unlock the power of innovation with the BAV99BRLP-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability. This rectifier diode is designed for a wide range of applications, offering exceptional performance and efficiency. With a compact package style and dual terminal position, this product is perfect for various electronic devices. Experience the value and benefits of the BAV99BRLP-7 and elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent protection for the diodes and ensures durability, making it a reliable choice for various applications.

Maximum Reverse Recovery Time: 0.004 us

Quick reverse recovery time allows for efficient and fast switching, ideal for high frequency applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance even in challenging environmental conditions.

Maximum Repetitive Peak Reverse Voltage: 75 V

Sufficient reverse voltage capability for many applications, providing reliable reverse protection.

Diode Type: RECTIFIER DIODE

Specifically designed as rectifier diodes, ensuring efficient conversion of alternating current (AC) to direct current (DC).

Technical Specifications

Diodes & Rectifiers BAV99BRLP-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Case Connection:

ANODE AND CATHODE

Config:

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Maximum Repetitive Peak Reverse Voltage:

75 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

75 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV99BRLP-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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