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B280

Diodes Incorporated

B280 by Diodes Incorporated

Diodes Inc.'s B280 is a Schottky rectifier diode with 80V reverse voltage, 2A output current, and 0.79V forward voltage. Ideal for surface mount applications, it operates up to 150°C. Commonly used in power supplies and battery chargers due to its high efficiency and low forward voltage drop.

Median Price

$139.130

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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RS (Exports)

UK . 1 parts In-Stock

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Nova Conductors

Japan . 30 parts In-Stock

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$344.906

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TodayComponents

USA . 100 parts In-Stock

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$429.840

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VNN

France . 2,654 parts In-Stock

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Vyrian

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Electronic Supply

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Prism Electronics

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AZTECH Wire

Italy . 405 parts In-Stock

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$13.067

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Netroflash

USA . 2,000 parts In-Stock

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$344.906

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Ampacity Inc.

Singapore . 1 parts In-Stock

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$374.000

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Overview

Unleash the power of innovation with the B280 by Diodes Incorporated. Crafted with precision and quality, this SCHOTTKY RECTIFIER DIODE offers reliable performance and efficiency. Ideal for a range of applications, the B280 is designed to deliver exceptional results. Experience the seamless integration of cutting-edge technology and superior design, providing you with unmatched value and benefits. Elevate your projects with the B280 and discover the difference that quality makes.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and usage, making it easy for users to incorporate into their electronic circuits.

Surface Mount: YES

Being surface mountable allows for compact and space-saving designs, making it ideal for applications where space is limited.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this product is suitable for use in various industrial and automotive applications where temperature fluctuations are common.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC currents, making this product ideal for rectification applications.

Maximum Forward Voltage (VF): 0.79 V

The low maximum forward voltage of 0.79V results in low power losses, ensuring efficient performance and reducing energy consumption.

Maximum Output Current: 2 A

With a high maximum output current of 2A, this product is capable of handling higher loads and delivering sufficient power for various electronic devices and circuits.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drops, making them ideal for high-frequency applications and minimizing power losses.

Maximum Repetitive Peak Reverse Voltage: 80 V

The high maximum repetitive peak reverse voltage of 80V ensures reliable operation and protection against reverse voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 50 A

The high maximum non-repetitive peak forward current of 50A allows this diode to withstand short-term current surges and transient events without damage.

Technical Specifications

Diodes & Rectifiers B280 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.79 V

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Maximum Repetitive Peak Reverse Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

B280 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4710-21-842-3864, 4710218423864, 4710-21-814-0874, 4710218140874, 4710-21-858-4424, 4710218584424, 4710-21-708-0174, 4710217080174, 4710-21-882-5906, 4710218825906, 4710-21-858-4426, 4710218584426, 4710-21-843-3485, 4710218433485, 4710-21-861-6502, 4710218616502, 4710-21-893-7205, 4710218937205, 4710-21-893-7644, 4710218937644, 4710-21-893-7206, 4710218937206, 4710-21-893-7648, 4710218937648, 4710-21-814-0877, 4710218140877, 4710-21-893-7207, 4710218937207, 5340-01-534-4787, 5340015344787, 5925-00-383-2322, 5925003832322, 5999-01-095-1744, 5999010951744, 7021-01-450-3351, 7021014503351, 5999-01-063-4662, 5999010634662

NIIN

218423864, 218140874, 218584424, 217080174, 218825906, 218584426, 218433485, 218616502, 218937205, 218937644, 218937206, 218937648, 218140877, 218937207, 015344787, 003832322, 010951744, 014503351, 010634662

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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