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B180

Diodes Incorporated

B180 by Diodes Incorporated

B180 diode by Diodes Inc. is a Schottky rectifier with max output current of 1A and forward voltage of 0.79V. It operates b/w -55 to 150°C, has reverse test voltage of 80V, and peak non-repetitive forward current of 30A. Widely used in electronics for power rectification due to its high efficiency and low forward voltage drop.

Median Price

$8.690

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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RS Americas

USA . 44 parts In-Stock

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$7.100

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Newark

USA . 83 parts In-Stock

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$7.830

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$6.720

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$6.080

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83

$7.830

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$6.080

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Farnell

UK . 5 parts In-Stock

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$8.639

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DigiKey

USA . 735 parts In-Stock

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$8.690

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$8.690

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Mouser Electronics

USA . 166 parts In-Stock

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Master Electronics

USA . 2 parts In-Stock

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$9.713

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$7.120

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$6.450

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Element14

Singapore . 15 parts In-Stock

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$18.000

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Verical

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TestEquity

USA . 14 parts In-Stock

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$7.990

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Electro Sonic

Canada . 6 parts In-Stock

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$8.230

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$7.570

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$7.240

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$8.230

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IBS Electronics

USA . 2 parts In-Stock

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$13.622

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$9.986

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$9.046

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Bisco

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Electronic Expediters

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Resion

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American Connector Supply Corp

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MISTER SPROCKETS

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Hisco

Germany . 26 parts In-Stock

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Perfect Parts

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Northwest PG Solutions

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Overview

Unlock the power of reliable performance with the B180 by Diodes Incorporated. This high-quality diode offers a range of benefits and applications, from consumer electronics to automotive systems. Its superior construction and cutting-edge technology ensure maximum efficiency and longevity. Experience peace of mind knowing that this product is backed by a trusted manufacturer, making it the perfect choice for your next project. Choose the B180 and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies installation and integration into circuits, reducing complexity.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB mounting, saving space and simplifying assembly.

Maximum Reverse Current: 20 uA

Low reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

Rectangular shape facilitates proper alignment and positioning in the circuit board, enhancing overall functionality.

Reverse Test Voltage: 80 V

High reverse test voltage provides protection against reverse polarity and overvoltage conditions.

No. of Terminals: 2

Having only two terminals simplifies installation and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs in electronic applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature range allows for operation in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides corrosion resistance and ensures good electrical contact.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and installation.

Minimum Breakdown Voltage: 80 V

High minimum breakdown voltage provides protection against voltage spikes and surges.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability during assembly process.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current, making it suitable for rectification applications.

Maximum Forward Voltage (VF): 0.79 V

Low maximum forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 1 A

High maximum output current rating allows for the handling of higher current loads in the circuit.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop, making the diode ideal for high-frequency applications.

Terminal Form: C BEND

C bend terminal form facilitates proper soldering and connection, ensuring secure attachment in the circuit.

Maximum Repetitive Peak Reverse Voltage: 80 V

High maximum repetitive peak reverse voltage rating ensures reliable operation during reverse voltage conditions.

Maximum Non Repetitive Peak Forward Current: 30 A

High maximum non-repetitive peak forward current rating allows for handling of short-term current surges without damage to the diode.

Diode Element Material: SILICON

Silicon diode element material provides good electrical conductivity and durability, ensuring long-term operational reliability.

Technical Specifications

Diodes & Rectifiers B180 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.79 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

20 uA

Reverse Test Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

B180 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

3030-00-529-0463, 3030005290463, 4140-21-882-7027, 4140218827027, 4320-01-122-8098, 4320011228098, 4730-00-277-6844, 4730002776844, 5905-99-538-8038, 5905995388038, 5905-99-558-5080, 5905995585080, 5905-99-780-4137, 5905997804137, 5905-99-780-4136, 5905997804136, 5905-99-911-3671, 5905999113671, 5935-25-140-6119, 5935251406119, 5995-00-681-1494, 5995006811494, 6150-00-911-6225, 6150009116225, 6740-00-567-7974, 6740005677974

NIIN

005290463, 218827027, 011228098, 002776844, 995388038, 995585080, 997804137, 997804136, 999113671, 251406119, 006811494, 009116225, 005677974

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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