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B160AE-13

Diodes Incorporated

B160AE-13 by Diodes Incorporated

B160AE-13 by Diodes Inc. is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.65V. It operates b/w -55°C to 150°C, has a reverse test voltage of 60V, and is ideal for applications requiring high-speed switching in compact electronic devices.

Median Price

$0.124

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,526 parts In-Stock

1+ parts

$0.210

100+ parts

$0.088

1k+ parts

$0.063

10k+ parts

$0.038

9,526

$0.210

$0.088

$0.063

$0.038

DigiKey

USA . 3,387 parts In-Stock

1+ parts

$0.210

100+ parts

$0.104

1k+ parts

$0.068

10k+ parts

$0.038

3,387

$0.210

$0.104

$0.068

$0.038

Future Electronics

Canada . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.033

50,000

-

-

-

$0.033

Verical

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

25,000

-

-

-

$0.038

Avnet

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

40,000

-

-

-

$0.052

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 684 parts In-Stock

1+ parts

$16.740

100+ parts

-

1k+ parts

-

10k+ parts

-

684

$16.740

-

-

-

Northwest PG Solutions

USA . 2,327 parts In-Stock

1+ parts

$18.414

100+ parts

$16.573

1k+ parts

-

10k+ parts

-

2,327

$18.414

$16.573

-

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Overview

Experience superior quality and reliability with the B160AE-13 by Diodes Incorporated. As a leading manufacturer in the field of diodes & rectifiers, Diodes Incorporated delivers innovative solutions for a wide range of applications. With its Schottky technology, this rectifier diode offers a maximum output current of 1A and a maximum reverse voltage of 60V, providing optimal performance in various electronic devices. Trust in Diodes Incorporated to provide you with a product that exceeds expectations in both quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for a variety of environments.

Config: SINGLE

Single configuration simplifies installation and usage, ideal for applications requiring a single diode setup.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration onto circuit boards.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and helps prevent excess power dissipation.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment during assembly.

Reverse Test Voltage: 60 V

A high reverse test voltage rating provides a wide margin of safety for applications with varying voltage requirements.

No. of Terminals: 2

Having two terminals simplifies the connection process and enhances compatibility with existing circuit layouts.

Package Style: SMALL OUTLINE

Small outline packaging saves space and allows for a more compact design in electronic devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliability and stable performance under demanding conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables use in extreme environments with varying temperature levels.

Terminal Finish: MATTE TIN

Matte Tin finish provides excellent solderability for easy and reliable connections during assembly.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting orientations and simplifies circuit integration.

Peak Reflow Temperature: 260C

High peak reflow temperature ensures proper soldering and enhances overall product reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode design ensures efficient current flow in one direction, making it suitable for various power conversion applications.

Maximum Forward Voltage (VF): 0.65V

Low forward voltage drop minimizes power losses and enhances overall efficiency of the diode.

Maximum Output Current: 1A

High output current rating allows for handling of moderate to high power loads effectively.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 60V

High repetitive peak reverse voltage rating ensures reliable operation and protects against voltage spikes or surges.

Maximum Non Repetitive Peak Forward Current: 30A

The ability to handle high non-repetitive peak forward currents makes this diode suitable for surge protection applications.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability, ensuring stable performance over an extended operational lifespan.

Technical Specifications

Diodes & Rectifiers B160AE-13 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

B160AE-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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